DataSheet26.com

WSB5512M PDF даташит

Спецификация WSB5512M изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв WSB5512M
Описание Schottky Barrier Diode
Производители WillSEMI
логотип WillSEMI логотип 

4 Pages
scroll

No Preview Available !

WSB5512M Даташит, Описание, Даташиты
WSB5512M
5A, Schottky Barrier Diode
WSB5512M
Http//:www.sh-willsemi.com
Features
Schottky barrier rectifier
Guarding protection
Low forward voltage
Reverse energy tested
High current capability
Extremely low thermal resistance
Standard products are Pb-free and
Halogen-free
SMA (DO-214AC)
. EE = Device code
* = Month code (A~Z)
Pin configuration and Marking
MECHANICAL DATA
Case: SMA molded plastic body
Polarity: Color band denotes cathode end
Mounting position: ANY
Order information
Device
Package
Shipping
WSB5512M-2/TR SMA (DO-214AC) 5000/Tape&Reel
Will Semiconductor Ltd.
1 Jan, 2014 - Rev. 1.3









No Preview Available !

WSB5512M Даташит, Описание, Даташиты
Absolute maximum ratings
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL(Fig.2)
Peak forward surge current 8.3ms single half-sine-wave
Operating temperature range
Storage temperature range
Thermal Characteristics
Parameter
Maximum thermal resistance (Junction to Lead)(Fig.2)
Electronics characteristics (TA=25oC)
Parameter
Maximum instantaneous forward voltage @IF=5.0A*
Maximum reverse current @ VDC (TJ=25oC)
Maximum reverse current @ VDC (TJ=100oC)
*: Pulse test, Pulse width 300us, duty cycle 1 %
WSB5512M
Symbol
VRRM
VRWS
VDC
IF(AV)
IFSM
TJ
TSTG
Value
40
28
40
5.0
150
-55 ~ 125
-55 ~ 150
Unit
V
V
V
A
A
oC
oC
Symbol
RθJL
Value
14
Unit
oC/W
Symbol
VF
IR
IR
Value
0.55
0.5
50
Unit
V
mA
mA
Will Semiconductor Ltd.
2 Jan, 2014 - Rev. 1.3









No Preview Available !

WSB5512M Даташит, Описание, Даташиты
WSB5512M
Typical characteristics (Ta=25oC, unless otherwise noted)
180 8
At rated T
L
Resistive or inductive Load
150 8.3ms Single half sine-wave
Device mounted at 14x14mm copper PAD
6
120
90 4
60
2
30
0
1 10 100
Number of Cycles at 60Hz
Fig.1: Peak Forward Surge Current
0
0
10
+65oC
1
0.1
0.01
+85oC
+125oC
-25oC
+25oC
-40oC
1E-3
0.0
0.1 0.2 0.3 0.4 0.5
Forward Voltage (V)
10000
1000
100
10
1
0.1
0.01
1E-3
1E-4
0.6 5
25 50 75 100 125
Lead Temperature (oC)
Fig.2: Power Derating Curve
150
+125oC
+65oC
+25oC
+85oC
-25oC
-40oC
10 15 20 25 30 35 40
Reverse Voltage (V)
Fig.3: Typical Forward Characteristics
1000
Fig.4: Typical Reverse Characteristics
100
10
F =1MHz
V =50mVrms
AC
1
0 5 10 15 20 25
Reverse Voltage:V (V)
R
Fig.5: Junction capacitance Vs. Reverse voltage
Will Semiconductor Ltd.
3
Jan, 2014 - Rev. 1.3










Скачать PDF:

[ WSB5512M.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WSB5512MSchottky Barrier DiodeWillSEMI
WillSEMI

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск