WSB5512M PDF даташит
Спецификация WSB5512M изготовлена «WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | WSB5512M |
Описание | Schottky Barrier Diode |
Производители | WillSEMI |
логотип |
4 Pages
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WSB5512M
5A, Schottky Barrier Diode
WSB5512M
Http//:www.sh-willsemi.com
Features
Schottky barrier rectifier
Guarding protection
Low forward voltage
Reverse energy tested
High current capability
Extremely low thermal resistance
Standard products are Pb-free and
Halogen-free
SMA (DO-214AC)
. EE = Device code
* = Month code (A~Z)
Pin configuration and Marking
MECHANICAL DATA
Case: SMA molded plastic body
Polarity: Color band denotes cathode end
Mounting position: ANY
Order information
Device
Package
Shipping
WSB5512M-2/TR SMA (DO-214AC) 5000/Tape&Reel
Will Semiconductor Ltd.
1 Jan, 2014 - Rev. 1.3
No Preview Available ! |
Absolute maximum ratings
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL(Fig.2)
Peak forward surge current 8.3ms single half-sine-wave
Operating temperature range
Storage temperature range
Thermal Characteristics
Parameter
Maximum thermal resistance (Junction to Lead)(Fig.2)
Electronics characteristics (TA=25oC)
Parameter
Maximum instantaneous forward voltage @IF=5.0A*
Maximum reverse current @ VDC (TJ=25oC)
Maximum reverse current @ VDC (TJ=100oC)
*: Pulse test, Pulse width 300us, duty cycle 1 %
WSB5512M
Symbol
VRRM
VRWS
VDC
IF(AV)
IFSM
TJ
TSTG
Value
40
28
40
5.0
150
-55 ~ 125
-55 ~ 150
Unit
V
V
V
A
A
oC
oC
Symbol
RθJL
Value
14
Unit
oC/W
Symbol
VF
IR
IR
Value
0.55
0.5
50
Unit
V
mA
mA
Will Semiconductor Ltd.
2 Jan, 2014 - Rev. 1.3
No Preview Available ! |
WSB5512M
Typical characteristics (Ta=25oC, unless otherwise noted)
180 8
At rated T
L
Resistive or inductive Load
150 8.3ms Single half sine-wave
Device mounted at 14x14mm copper PAD
6
120
90 4
60
2
30
0
1 10 100
Number of Cycles at 60Hz
Fig.1: Peak Forward Surge Current
0
0
10
+65oC
1
0.1
0.01
+85oC
+125oC
-25oC
+25oC
-40oC
1E-3
0.0
0.1 0.2 0.3 0.4 0.5
Forward Voltage (V)
10000
1000
100
10
1
0.1
0.01
1E-3
1E-4
0.6 5
25 50 75 100 125
Lead Temperature (oC)
Fig.2: Power Derating Curve
150
+125oC
+65oC
+25oC
+85oC
-25oC
-40oC
10 15 20 25 30 35 40
Reverse Voltage (V)
Fig.3: Typical Forward Characteristics
1000
Fig.4: Typical Reverse Characteristics
100
10
F =1MHz
V =50mVrms
AC
1
0 5 10 15 20 25
Reverse Voltage:V (V)
R
Fig.5: Junction capacitance Vs. Reverse voltage
Will Semiconductor Ltd.
3
Jan, 2014 - Rev. 1.3
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Номер в каталоге | Описание | Производители |
WSB5512M | Schottky Barrier Diode | WillSEMI |
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