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WSB5524D PDF даташит

Спецификация WSB5524D изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв WSB5524D
Описание Schottky Barrier Diode
Производители WillSEMI
логотип WillSEMI логотип 

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WSB5524D Даташит, Описание, Даташиты
WSB5524D
Middle Power Schottky Barrier Diode
Features
1.5A Average rectified forward current
Low forward voltage,Low leakage current
FBP package
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average forward current(1)
Forward Peak Surge Current (2)
Junction temperature
Operating temperature
Storage temperature
WSB5524D
Http://www.sh-willsemi.com
FBP1608-02L
Circuit
Symbol
VRRM
VR
IF(AV)
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
1.5
7
125
-40 ~ 125
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage (3)
Reverse current
Junction capacitance
Thermal resistance
VF
IR
CJ
Rθ(J-SP)
IF=1.5A
VR=40V
VR=4V, F=1MHz
Junction to soldering point of
cathode tab
Min.
Typ.
0.50
57
Max.
0.60
0.1
70
20
Unit
V
mA
pF
K/W
Order Informations
Device
WSB5524D-2/TR
Package
FBP1608-02L(1.6*0.8)
Marking
P* (4)
Shipping
10000/Reel&Tape
Note1: Duty cycle=0.5,f=20kHz,square wave;
Note2: Pulse width=8.3ms, single pulse;
Note3: Single Pulse, test Tp=380us;
Note4: * = Month code (A~Z); P = Device code;
Will Semiconductor Ltd.
1
May, 2014 - Rev. 1.2









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WSB5524D Даташит, Описание, Даташиты
Typical characteristics (Ta=25oC, unless otherwise noted)
WSB5524D
1
+125oC
0.1 +150oC
0.01
1E-3
0.0
+85oC
+25oC
-50oC
0.1 0.2 0.3 0.4 0.5
Forward Voltage (V)
10000
1000
100
10
1
0.1
0.01
0.6
1E-3
5
+125oC
+85oC
+25oC
-50oC
10 15 20 25 30 35 40
Reverse Voltage (V)
Fig.1 Forward voltage vs. Forward current
Fig.2 Reverse current vs. Reverse voltage
2.0 1000
1.5
100
1.0
10
0.5
0.0
0
25 50 75 100
Soldering point temperature (oC)
125
Fig.3 Average Forward Current Derating Curve
1
0 5 10 15 20 25
Reverse Voltage (V)
Fig.4 Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 May, 2014 - Rev. 1.2









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WSB5524D Даташит, Описание, Даташиты
Package outline dimensions
FBP1608-02L(1.6*0.8*0.5)
WSB5524D
Symbol
A
A1
D
D1
D2
E
L1
L2
L3
L4
e
Dimensions In Milimeters
Min.
Max.
0.450
0.550
0.010
0.090
0.750
0.850
0.520
0.680
0.600
0.760
1.550
1.650
0.410 REF.
0.850 REF.
0.080 REF.
0.340 REF.
0.900
1.000
Will Semiconductor Ltd.
3
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.030
0.033
0.020
0.027
0.024
0.030
0.061
0.065
0.016 REF.
0.033 REF.
0.003 REF.
0.013 REF.
0.035
0.039
May, 2014 - Rev. 1.2










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Номер в каталогеОписаниеПроизводители
WSB5524DSchottky Barrier DiodeWillSEMI
WillSEMI

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