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WSB5539N PDF даташит

Спецификация WSB5539N изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв WSB5539N
Описание Schottky Barrier Diode
Производители WillSEMI
логотип WillSEMI логотип 

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WSB5539N Даташит, Описание, Даташиты
WSB5539N
0.5A, Schottky Barrier Diode
Features
WSB5539N
Http://www.willsemi.com
Low forward voltage
0.5A Average rectified forward current
Peak forward current tested
Standard products are Pb-free and Halogen-free
DFN1006-2L
Circuit
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward current (1)
Junction temperature
Operating temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
0.5
3
150
-40 ~ 85
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
Thermal resistance
VF
IR
CJ
Rθ(j-a)
IF=0.5A
VR=40V
VR=4V, F=1MHz
Junction to ambient
Min.
-
-
-
Order Informations
Device
WSB5539N-2/TR
Package
DFN1006-2L
Marking
C* (2)
Note 1 : Pulse Width=8.3ms, Single Pulse
Note 2 : * = Month code (A~Z); C = Device code
Typ.
0.53
3
20
Max.
0.63
100
500
Unit
V
uA
pF
K/W
Shipping
10000/Reel&Tape
Will Semiconductor Ltd.
1 2014/9/10 – Rev. 1.0









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WSB5539N Даташит, Описание, Даташиты
WSB5539N
Typical characteristics (Ta=25oC, unless otherwise noted)
1
T=150oC
T=125oC
0.1 T=85oC
T=65oC
0.01
T=25oC
T=0oC
T=-50oC
10000
1000
100
10
1
0.1
0.01
T=85oC
T=150oC
T=125oC
T=65oC
T=25oC
T=0oC
T=-50oC
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage (V)
Forward voltage vs. Forward current
1E-3
5
10 15 20 25 30 35 40
Reverse Voltage (V)
Reverse current vs. Reverse voltage
80
f = 1MHz
70
60
50
40
30
20
10
0
0 5 10 15 20 25
Reverse Voltage (V )
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 2014/9/10 – Rev. 1.0









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WSB5539N Даташит, Описание, Даташиты
Package outline dimensions
DFN1006-2L
WSB5539N
Top View
Bottom View
Side View
Symbol
A
A1
A3
D
E
b
L
e
Min.
0.40
0.00
0.95
0.55
0.20
0.45
Dimensions in millimeter
Typ.
-
-
0.125 Ref.
1.00
0.60
0.25
0.50
0.65 Typ.
Max.
0.50
0.05
1.05
0.65
0.30
0.55
Recommend land pattern (Unit: mm)
0.55
0.30
0.85
1.40
Will Semiconductor Ltd.
0.60
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
3 2014/9/10 – Rev. 1.0










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Номер в каталогеОписаниеПроизводители
WSB5539NSchottky Barrier DiodeWillSEMI
WillSEMI

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