WSB5556Z PDF даташит
Спецификация WSB5556Z изготовлена «WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | WSB5556Z |
Описание | Schottky Barrier Diode |
Производители | WillSEMI |
логотип |
3 Pages
No Preview Available ! |
WSB5556Z
Schottky Barrier Diode
Features
100mA Average rectified forward current
Low forward voltage
Low leakage current
Small package DFN0603-2L
Applications
Low Current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward surge current (8.3ms single sine pluse)
Junction temperature
Operating temperature
Storage temperature
WSB5556Z
Http://www.sh-willsemi.com
DFN0603-2L(Bottom View)
Circuit
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
30
30
100
2
150
-40 ~ 150
-40 ~ 150
Unit
V
V
mA
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Reverse Voltage
Forward Voltage
Reverse current
Junction capacitance
Thermal Resistance
VR
VF
IR
CJ
Rθ(JA)
IR=100uA
IF=1mA
IF=10mA
VR=10V
VR=30V
VR=5V, F=1MHz
Junction to Ambient
Order Information
Device
WSB5556Z-2/TR
Package
DFN0603-2L
Min.
30
Typ.
16
Max.
0.28
0.36
6
15
650
Unit
V
V
V
uA
uA
pF
K/W
Marking
*F(1)
Shipping
10000/Reel&Tape
Note 1:*= Month code(A~Z); F= Device code;
Will Semiconductor Ltd.
1 2015/3/4 - Rev.1. 0
No Preview Available ! |
Typical characteristics (Ta=25oC, unless otherwise noted)
WSB5556Z
1
150oC
0.1 125oC
85oC
0.01
65oC
25oC
1E-3
0oC
-40oC
1E-4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Forward Voltage (V)
Fig.1 Forward voltage vs. Forward current
100000
10000
1000
100
10
1
0.1
0.01
1E-3
150oC
125oC
85oC
65oC
25oC
0oC
-40oC
1E-4
5
10 15 20 25
Reverse Voltage (V)
30
Fig.2 Reverse current vs. Reverse voltage
40
o
35 T=25 C
f=1MHz
30
25
20
15
10
5
0 5 10 15 20 25
Reverse Voltage (V)
Fig.3 Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 2015/3/4 - Rev.1. 0
No Preview Available ! |
Package outline dimensions
C
D
F
G
E
H
WSB5556Z
A
B Symbol
Dimensions in millimeter
Min.
Typ.
Max.
A
0.275
0.310
0.340
B 0.050 REF.
C
0.270
0.320
0.370
D
0.570
0.620
0.670
E
0.125
0.160
0.195
F 0.030 REF.
G
0.225
0.260
0.295
H
0.365
0.400
0.435
Recommend land pattern
(Unit: mm)
Will Semiconductor Ltd.
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
3 2015/3/4 - Rev.1. 0
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Номер в каталоге | Описание | Производители |
WSB5556Z | Schottky Barrier Diode | WillSEMI |
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