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WNT2F04 PDF даташит

Спецификация WNT2F04 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Transistors».

Детали детали

Номер произв WNT2F04
Описание Transistors
Производители WillSEMI
логотип WillSEMI логотип 

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WNT2F04 Даташит, Описание, Даташиты
WNT2F04
NPN, General Purpose Transistors
WNT2F04
Http//:www.willsemi.com
Descriptions
The WNT2F04 is designed for general purpose
amplifier applications. Standard products are
Pb-free and Halogen-free
SOT-23
Features
Complementary to WPT2F06
Collector Current: IC=0.2A
(Top View)
3
1AM
12
Marking :1AM
1: BASE
2: EMITTER
3: COLLECTOR
Order information
Device
Package
Shipping
WNT2F04-3/TR SOT-23 3000/Reel&Tape
Absolute maximum ratings
Parameter
Symbol
Collector-emitter Voltage
VCEO
Collector-base Voltage
VCBO
Emitter-base Voltage
VEBO
Continues Collector Current
IC
Collector Power Dissipation
PC
Thermal Resistance From Junction To Ambient RΘJA
Junction Temperature
TJ
Operating Temperature
TOPR
Storage Temperature Range
Tstg
Value
40
60
6
200
250
625
150
0~+70
-55~+150
Unit
V
V
V
mA
mW
°C /W
°C
°C
°C
Will Semiconductor Ltd. 1 Mar, 2014 - Rev.1.2









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WNT2F04 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNT2F04
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Collector capacitance
Emitter capacitance
Noise figure
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
BVCEO
BVCBO
BVEBO
ICEX
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
CC
CE
F
fT
td
tr
ts
tf
Test Conditions
IC=1mA, IB=0mA
IC=10uA, IE=0mA
IE=10uA, IC=0mA
VCE=30V,
VEB(OFF)=3V
VCB=60V, IE=0A
VEB=5V, IC=0A
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
IE=Ie=0;VCE=5V;
f=1MHz
IC=Ic=0;VBE=0.5V;
f=1MHz
IC=100mA;
VCE=5V; RS=1kΩ;
f=10Hz to15.7kHz
VCE=20V,
IC=10mA,
f=100MHz
VCC=3V,
VBE(off)=-0.5V
IC=10mA,
IB1=1mA
VCC=3V,
IC=10mA,
IB1= IB2=1mA
Min.
40
60
6
80
100
60
300
Max.
50
100
100
0.3
0.95
300
4
8
5
35
35
200
50
Unit
V
V
V
nA
nA
nA
V
V
pF
pF
dB
MHz
ns
ns
ns
ns
Will Semiconductor Ltd. 2 Mar, 2014 - Rev.1.2









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WNT2F04 Даташит, Описание, Даташиты
Typical characteristics (Ta=25oC, unless otherwise noted)
WNT2F04
Will Semiconductor Ltd. 3 Mar, 2014 - Rev.1.2










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