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PDF WPT2N32 Data sheet ( Hoja de datos )

Número de pieza WPT2N32
Descripción Transistors
Fabricantes WillSEMI 
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WPT2N32
Single, PNP, -30V, -1A, Power Transistor with
20V N-MOSFET
WPT2N32
Http//:www.willsemi.com
Descriptions
The WPT2N32 is PNP bipolar power transistor
with 20V N-MOSFET. This device is suitable for use
in charging circuit and other power management.
Standard Product WPT2N32 is Pb-free.
DFN2x2-6L
1E
C C6
Features
Ultra low collector-to-emitter saturation voltage
High DC current gain >100
1A continue collector current
Small package DFN2x2-6L
2B
3D
D
G5
S4
Pin configuration (Top view)
65 4
2N32
YYWW
Applications
Charging circuit
Other power management in portable
equipments
12 3
2N32 = Device code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WPT2N32-6/TR DFN2x2-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jul, 2012 - Rev.1.0

1 page




WPT2N32 pdf
WPT2N32
N-MOSFET
5.0
4.5
VGS=4.5V
VGS=3.5V
4.0 VGS=2.5V
3.5
3.0 VGS=2.0V
2.5
2.0
1.5 VGS=1.5V
1.0
0.5
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS-Drain to Source Voltage(V)
Output Characteristics
400
350
300 VGS=1.8V
250
VGS=2.5V
200
VGS=4.5V
150
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
IDS-Drain to Source Current(A)
ON Resistance vs. Drain Current
3.0
T=-50OC
2.5
2.0
1.5 T=25OC
1.0 T=125OC
0.5
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V -Gate to Source Voltage(V)
GS
Transfer Characteristics
600
550 ID=0.55A
500
450
400
350
300
250
200
150
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS-Gate to Source Voltage(V)
ON Resistance vs. Gate-to-Source Voltage
400
350 VGS=4.5V,ID=0.55A
300
1.0
0.8
ID=250uA
250 0.6
200
150 0.4
100
0.2
50
0
-50 -25
0 25 50 75 100 125 150
Temperature(OC)
ON Resistance vs. Junction Temperature
0.0
-50 -25
0 25 50 75 100 125 150
Temperature(OC)
Threshold Voltage vs. Temperature
Will Semiconductor Ltd. 5 Jul, 2012 - Rev.1.0

5 Page










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