WNM2077 PDF даташит
Спецификация WNM2077 изготовлена «WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )». |
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Детали детали
Номер произв | WNM2077 |
Описание | MOSFET ( Transistor ) |
Производители | WillSEMI |
логотип |
6 Pages
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WNM2077
WNM2077
Single N-Channel, 20V, 0.54A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.420@ VGS=4.5V
0.580@ VGS=2.5V
0.840@ VGS=1.8V
ESD Protected
Descriptions
The WNM2077 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2077 is Pb-free.
Features
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package SOT-723
Applications
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging
Will Semiconductor Ltd.
1
Http//:www.willsemi.com
SOT-723
D
3
12
GS
Pin configuration (Top view)
NB = Device Code
* = Month (A~Z)
Marking
Order information
Device
WNM2077-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Sep, 2015 - Rev.1.0
No Preview Available ! |
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ad
Maximum Power Dissipation ad
Continuous Drain Current bd
Maximum Power Dissipation bd
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2077
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
0.54 0.51
0.43 0.41
0.36 0.31
0.23 0.20
0.49 0.44
0.39 0.35
0.29 0.23
0.18 0.14
0.9
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
255
325
375
445
220
Maximum
345
395
430
535
300
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2
Sep, 2015 - Rev.1.0
No Preview Available ! |
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
gFS
Drain-to-source On-resistance b, c
RDS(on)
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = 250uA
VDS = 16V, VGS = 0V
VDS = 0 V, VGS = ±10V
VGS = VDS, ID = 250uA
VDS = 10V, ID = 0.35A
VGS = 4.5V, ID = 0.35A
VGS = 3.1V, ID = 0.20A
VGS = 2.5V, ID = 0.20A
VGS = 1.8V, ID = 0.20A
VGS = 1.5V, ID = 0.04A
VGS = 0 V,
f = 1MHz,
VDS = 10 V
VGS = 4.5 V,
VDS = 10 V,
ID = 0.54A
VGS = 4.5 V,
VDD = 10 V,
ID=0.54 A,
RG=6 Ω
VGS = 0 V, IS = 0.3A
WNM2077
Min Typ Max Unit
20 V
1 uA
±5 uA
0.45 0.70 1.0
V
0.85 S
420 600
500 700
580 800 mΩ
840 1300
1100 1600
30
7 pF
5
1.07
0.12
nC
0.32
0.14
7.2
9.5
19.6
4.6
ns
0.85 1.5 V
Will Semiconductor Ltd.
3
Sep, 2015 - Rev.1.0
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