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PDF WPM3021 Data sheet ( Hoja de datos )
| Número de pieza | WPM3021 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM3021 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM3021
Single P-Channel, -30V, -11.5A, Power MOSFET
VDS (V)
-30
Typical RDS(on) (mΩ)
11@ VGS=-10V
15@VGS=-5V
Descriptions
The WPM3021 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3021 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOP-8L
WPM3021
Http://www.sh-willsemi.com
(4)
(3)
(2)
(1)
SOP-8L
DD
87
DD
65
12
SS
34
SG
Pin configuration (Top view)
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PS =DeviceCode
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3021-8/TR
Package
SOP-8L
Shipping
2500/Tape&Reel
Will Semiconductor Ltd. 1 2016/08/03-Rev.1.0
1 page  
WPM3021
3500
3000
2500
2000
1500
1000
500
0
0
400
300
200
Ciss
F = 1MHZ
Crss
Coss
3 6 9 12
-VDS-Drain to Source Voltage (V)
Capacitance
15
TJ(MAX)=150oC
TA=25oC
100
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
Single pulse power
100 1000
10
VDS=-15V
8 ID=-5A
10
8
6
T=150oC
T=25oC
4
2
0.0
100
0.2 0.4 0.6 0.8 1.0
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
1.2
10 100us
1ms
1 Limit by Rdson
DC
10ms
100ms
1s
0.1
0.01
0.1
TA=25oC
Single Pulse
10s
BVDSS Limit
1 10 100
-VDS-Drain to Source Voltage(V)
*VGS>minimum VGS at which RDS(ON) is specified
Safe operating power
6
4
2
0
0 10 20 30 40
Qg(nC)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 2016/08/03-Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM3021.PDF ] | |
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