DataSheet26.com

WPM3023 PDF даташит

Спецификация WPM3023 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WPM3023
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

7 Pages
scroll

No Preview Available !

WPM3023 Даташит, Описание, Даташиты
WPM3023
Single P-Channel, -30V, -3.9A, Power MOSFET
VDS (V)
-30
Typical RDS(on) (mΩ)
37 @ VGS=-10V
50 @ VGS=-4.5V
WPM3023
Http://www.sh-willsemi.com
Descriptions
The WPM3023 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3023 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PF = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3023-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 July.2016- Rev.1.0









No Preview Available !

WPM3023 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM3023
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
-30
±20
-3.9 -3.3
-3.1 -2.6
1.2 0.9
0.8 0.6
-3.1 -2.8
-2.5 -2.3
0.8 0.7
0.5 0.4
-15.6
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
84
120
130
145
60
Maximum
102
145
160
190
75
Unit
°C/W
a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%.
d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
Will Semiconductor Ltd. 2 July.2016- Rev.1.0









No Preview Available !

WPM3023 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM3023
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS
VGS = 0 V, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS =-24V, VGS = 0V
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250uA
Drain-to-source On-resistance
RDS(on)
VGS = -10V, ID = -4.5A
VGS =-4.5V, ID = -4A
Forward Transconductance
gFS VDS = -5 V, ID = -3.3A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0MHz, VDS =
-15 V
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
QG( TOT)
QG( TH)
QGS
QGD
VGS = -4.5 V, VDS = -10 V,
ID =-5.0 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = -10 V, VDD =-15 V,
ID=-4A, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -1A
Min
-30
-1.0
-0.6
Typ Max Unit
-1
±100
V
uA
nA
-1.8 -3.0 V
37 54
mΩ
50 74
4 7S
778
85 pF
68
6.8
0.55
nC
2.5
2.1
11.2
4.7
ns
50
8
-0.75 -1.2 V
Will Semiconductor Ltd. 3 July.2016- Rev.1.0










Скачать PDF:

[ WPM3023.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WPM3021MOSFET ( Transistor )WillSEMI
WillSEMI
WPM3022MOSFET ( Transistor )WillSEMI
WillSEMI
WPM3023MOSFET ( Transistor )WillSEMI
WillSEMI

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск