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PDF WPMD2084 Data sheet ( Hoja de datos )
| Número de pieza | WPMD2084 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPMD2084 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPMD2084
Dual P-Channel, -20V, -3.3A, Power MOSFET
VDS (V)
-20
Typical RDS(on) (mΩ)
80 @ VGS=-4.5V
105 @ VGS=-2.5V
Descriptions
The WPMD2084 is Dual P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPMD2084 is Pb-free.
WPMD2084
Http://www.sh-willsemi.com
D2
G1
PIN1 S1
S2
G2
D1
DFN2X2-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN2X2-6L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
2084
DA
Y
W
= Device Code
= Special Code
= Year
= Week(A~z)
Marking
Order information
Device
Package
Shipping
WPMD2084-6/TR DFN2X2-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/04/22- Rev.1.0
1 page  
700
600
500
400
300
200
100
0
0
F=1MHz
Ciss
Crss
Coss
5 10 15
-VDS-Drain to Source Voltage (V)
20
Capacitance
120
100 TJ(MAX)=150oC
TA=25oC
80
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
Single pulse power
WPMD2084
5
4
3
2 T=150oC
1 T=25oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
100
Limit by Rdson
10
100us
1ms
10ms
1
0.1 T =25oC
A
Single Pulse
10s
DC
100ms
1s
BVDSS Limit
0.1 1 10 100
-V -Drian to Source Voltage(V)
DS
*V >minimum V at which R is specified
GS GS DS(ON)
Safe operating power
4 VDS=-10V
ID=-2.4A
3
2
1
0
12345
Qg(nC)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 2016/04/22- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPMD2084.PDF ] | |
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