NSVBAV70DXV6 PDF даташит
Спецификация NSVBAV70DXV6 изготовлена «ON Semiconductor» и имеет функцию, называемую «Monolithic Dual Switching Diode Common Cathode». |
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Детали детали
Номер произв | NSVBAV70DXV6 |
Описание | Monolithic Dual Switching Diode Common Cathode |
Производители | ON Semiconductor |
логотип |
4 Pages
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BAV70DXV6,
NSVBAV70DXV6
Monolithic Dual Switching
Diode Common Cathode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
100
200
500
Vdc
mAdc
mAdc
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 357 mW
(Note 1)
2.9 mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
RqJA
350 °C/W
(Note 1)
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 500 mW
(Note 1)
4.0 mW/°C
(Note 1)
Thermal Resistance, Junction-to-Ambient
RqJA
250 °C/W
(Note 1)
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
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6
CATHODE
5
ANODE
4
ANODE
ANODE
1
2
ANODE
3
CATHODE
BAV70DXV6T1
SOT−563
CASE 463A
1
MARKING DIAGRAM
A4 M G
G
1
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
BAV70DXV6T5G
SOT−563 8000 / Tape &
(Pb−Free)
Reel
NSVBAV70DXV6T5G SOT−563 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1
Publication Order Number:
BAV70DXV6T1/D
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BAV70DXV6, NSVBAV70DXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (Note 2)
(I(BR) = 100 mAdc)
V(BR)
100 − Vdc
Reverse Voltage Leakage Current (Note 2)
(VR = 25 Vdc, TJ = 150°C)
(VR = 100 Vdc)
(VR = 70 Vdc, TJ = 150°C)
IR mAdc
− 60
− 1.0
− 100
Diode Capacitance (Note 2)
(VR = 0, f = 1.0 MHz)
CD − 1.5 pF
Forward Voltage (Note 2)
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF mVdc
− 715
− 855
− 1000
− 1250
Reverse Recovery Time (Note 2)
(IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1)
RL = 100 W
trr
− 6.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. For each individual diode while second diode is unbiased.
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
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100
10
1.0
0.1
0.2
BAV70DXV6, NSVBAV70DXV6
TA = 85°C
Curves Applicable to Each Anode
10
1.0
TA = 150°C
TA = 125°C
TA = - 40°C
TA = 25°C
0.1
0.01
TA = 85°C
TA = 55°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.001
1.2 0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
8
Figure 4. Capacitance
50
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3
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Номер в каталоге | Описание | Производители |
NSVBAV70DXV6 | Monolithic Dual Switching Diode Common Cathode | ON Semiconductor |
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