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C3621 PDF даташит

Спецификация C3621 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC3621».

Детали детали

Номер произв C3621
Описание NPN Transistor - 2SC3621
Производители Toshiba
логотип Toshiba логотип 

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C3621 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3621
Color TV Vertitcal Deflection Output Applications
Color TV Class-B Sound Output Applications
2SC3621
Unit: mm
Large collector current and collector power dissipation capability
Recommended for vertical deflection output and sound output
applications for line-operated TVs.
Complementary to 2SA1408.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 150 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 1.5 A
Base current
IB 1.0 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.5
W
10
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
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C3621 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 150 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE
(Note)
VCE = 5 V, IC = 200 mA
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 5 mA
fT VCE = 5 V, IC = 200 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 100 to 200, Y: 160 to 320
Marking
2SC3621
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
150
V
100 320
― ― 1.5 V
0.5 0.8 V
20 100 MHz
13 20 pF
Lot No.
C3621
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2 2006-11-09
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C3621 Даташит, Описание, Даташиты
1.6
100 80 60
1.2
IC – VCE
40
20
Common
emitter
Tc = 25°C
10
5
0.8
3
0.4 2
IB = 1 mA
0
0
0 4 8 12 16 20
Collector-emitter voltage VCE (V)
500
300 Tc = 100°C
25
0
100
hFE – IC
50 Common emitter
VCE = 10 V
20
30
VCE = 5 V
100
300
1000
Collector current IC (mA)
2SC3621
hFE – IC
50
Common emitter
30 Tc = 25°C
VCE = 10 V
25
10
5
2
30
100 300
1000
Collector current IC (mA)
0.5
Common emitter
0.3 Tc = 25°C
VCE (sat) – IC
0.1
0.05
0.03
IC/IB = 10
5
0.01
0
30 100 300 1000
Collector current IC (mA)
0.5
Common emitter
0.3 IC/IB = 10
VCE (sat) – IC
0.1
0.05
0.03
Tc = 100°C
25
0
0.01
10
30 100 300 1000
Collector current IC (mA)
IC – VBE
1.6
Common emitter
1.4 VCE = 5 V
1.2
1.0
0.8 Tc = 100°C
0.6
0.4
25 0
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-emitter voltage VBE (V)
3 2006-11-09
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