HCT802 PDF даташит
Спецификация HCT802 изготовлена «TT» и имеет функцию, называемую «Dual Enhancement Mode MOSFET». |
|
Детали детали
Номер произв | HCT802 |
Описание | Dual Enhancement Mode MOSFET |
Производители | TT |
логотип |
3 Pages
No Preview Available ! |
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Features:
6 pad surface mount package
VDS = 90V
RDS(on) < 5Ω
ID(on) N-Channel = 1.5A | P-Channel = 1.1A
Two devices selected for VDS ID(on) and RDS(on) similarity
Full TX Processing Available
Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used
are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode
MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.
TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.
TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.
Applications:
Drivers: Solid State
Relays, Lamps,
Solenoids, Displays,
Memories, etc.
Motor Control
Power Supply
Circuits
Part
Number
Sensor Type
VDSS ID(ON) (mA)
Min Min
Gfs (ms)
Min
HCT801 N & P ‐Channel
HCT801TX Enhancement 90 1.5 & ‐1.1 170 & 200
HCT801TXV
MOSFET
t(ON) / t(OFF) (ns)
Max
Package
15/17 & 50/50 6‐pin Ceramic
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 11/2016 Page 1
No Preview Available ! |
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Absolute Maximum Ra ngs
Drain Source Voltage
Gate‐Source Voltage
Drain Current (Limited by Tj max) N‐Channel
P‐Channel
Opera ng and Storage Temperature
Power Dissipa on
TA = 25°C (Both devices equally driven)
TA = 25°C (Both devices equally driven)
(TS = Substrate that the package is soldered to)
90V
±20 V
2A
1.1A
-55° C to +150° C
0.5 W Total
1.5 W Total (1)
Electrical Characteris cs (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
DEVICE
B=BOTH
MIN
MAX
UNITS
TEST CONDITIONS
BVDSS Drain‐Source Breakdown
B 90(2)
V ID = 10 µA(2), VGS = 0
VTH Gate Threshold Voltage
N
0.75
2.5
P ‐2.0 ‐4.5
V VGS = VDS, ID = 1 mA
V ID = ‐1 mA
IGSS Gate‐Body Leakage
IDSS Zero Gate Voltage Drain Current
B ±100 nA VGS = ± 20 V, VDS = 0
B 10(2) µA VDS = 90 V(2), VGS = 0 V
B 500(2) µA Tj = 150° C
ID(on) On‐State Drain Current
RDS(on) Drain‐Source on Resistance
N 1.5
P ‐1.1
B 5
A VDS = 25 V, VGS = 10 V
A VDS = ‐15 V, VGS = ‐10 V
Ω VGS = 10 V(2), ID = 1 A(2)
Gfs Forward Transconductance
N 170 mmho VDS = 25V, ID = 0.5 A
P 200 Mmho VDS = ‐10 V, ID = ‐0.5 A
CISS Input Capacitance
N 70 pf VDS = 25 V, VGS = 0 V, f = 1 MHz
P 150 pf VDS = ‐25 V, VGS = 0 V, f = 1 MHz
COSS Common Source Output Capacitance
N
40 pf VDS = 25 V, VGS = 0 V, f = 1 MHz
P 60 pf VDS = ‐25 V, VGS = 0 V, f = 1 MHz
CRSS Reverse Transfer Capacitance
N 10 pf VDS = 25 V, VGS = 0 A, f = 1 MHz
P 25 pf VDS = ‐25 V, VGS = 0 A, f = 1 MHz
Note:
1) This ra ng is provided as an aid to designers. It is dependent upon moun ng material and methods and is not measurable as an outgoing test.
2) Reverse polarity for P‐Channel device
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 11/2016 Page 2
No Preview Available ! |
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Electrical Characteris cs (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
DEVICE
B=BOTH
MIN
t(on) Turn‐on‐ me
N
P
t(off) Turn‐off‐ me
N
P
MAX
15
50
17
50
UNITS
TEST CONDITIONS
ns VDD = 25 v, ID = 1 A, RL = 50 Ω
ns VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω
ns VDD = 25 v, ID = 1 A, RL = 50 Ω
ns VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 11/2016 Page 3
Скачать PDF:
[ HCT802.PDF Даташит ]
Номер в каталоге | Описание | Производители |
HCT802 | Dual En hance ment Mode MOS FET | OPTEK |
HCT802 | Dual Enhancement Mode MOSFET | TT |
HCT802TX | Dual Enhancement Mode MOSFET | TT |
HCT802TX | Dual En hance ment Mode MOS FET | OPTEK |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |