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PDF NSVBSP19AT1G Data sheet ( Hoja de datos )
| Número de pieza | NSVBSP19AT1G | |
| Descripción | NPN Silicon Expitaxial Transistor | |
| Fabricantes | ON Semiconductor | |
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BSP19AT1G,
NSVBSP19AT1G
NPN Silicon Expitaxial
Transistor
This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT−223 package which is designed for
medium power surface mount applications.
Features
• High Voltage
• The SOT-223 Package Can Be Soldered Using Wave or Reflow
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered Joints
• The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
• PNP Complement is BSP16T1G
• Moisture Sensitivity Level (MSL): 1
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
VCEO
VCBO
VEBO
IC
350 Vdc
400 Vdc
5.0 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Power
(Note 1)
Dissipation
@
TA
=
25°C
Derate above 25°C
PD 0.8 W
6.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
ESD − Human Body Model
RqJA
Tstg
HBM
156
−65 to +150
3B
°C/W
°C
V
ESD − Machine Model
MM C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
http://onsemi.com
SOT−223 PACKAGE
NPN SILICON HIGH VOLTAGE
TRANSISTOR SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
3
TO-261AA
CASE 318E
STYLE 1
MARKING
DIAGRAM
4
Collector
1
Base
AYW
SP19A G
G
2
Collector
3
Emitter
A = Assembly Location
Y = Year
W = Work Week
SP19A = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSP19AT1G
Package
Shipping†
SOT−223 1000 / Tape & Reel
(Pb−Free)
NSVBSP19AT1G SOT−223 1000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 11
1
Publication Order Number:
BSP19AT1/D
1 page | ||
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| PDF Descargar | [ Datasheet NSVBSP19AT1G.PDF ] | |
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