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PDF NSVBSS63LT1G Data sheet ( Hoja de datos )
| Número de pieza | NSVBSS63LT1G | |
| Descripción | High Voltage Transistor | |
| Fabricantes | ON Semiconductor | |
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BSS63LT1G,
NSVBSS63LT1G
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Emitter Voltage
RBE = 10 kW
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCER
IC
−100
−110
−100
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
mW
225
1.8 mW/°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
mW
300 mW/°C
2.4
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
BM M G
G
BM = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BSS63LT1G
NSVBSS63LT1G
SOT−23
(Pb−free)
SOT−23
(Pb−free)
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1
Publication Order Number:
BSS63LT1/D
1 page  
BSS63LT1G, NSVBSS63LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
E
A
A1
D
3
12
e
TOP VIEW
SIDE VIEW
HE
3X b
0.25
T
L
L1
VIEW C
SEE VIEW C
END VIEW
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.08 0.14 0.20
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.30
0.43
0.55
L1 0.35
0.54
0.69
H E 2.10
T 0°
2.40
−−−
2.64
10°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
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BSS63LT1/D
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