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PDF SBAS40-06LT1 Data sheet ( Hoja de datos )

Número de pieza SBAS40-06LT1
Descripción Schottky Barrier Diodes
Fabricantes Motorola Semiconductors　
Logotipo Motorola Semiconductors Logotipo



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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc
1
ANODE
3
CATHODE/ANODE
2
CATHODE
BAS40-06LT1
Motorola Preferred Device
40 VOLTS
SCHOTTKY BARRIER DIODES
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
Operating Junction and Storage Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Value
40
225
1.8
– 55 to +150
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
40
—
—
—
—
—
Max
—
5.0
1.0
380
500
1.0
Unit
Volts
mW
mW/°C
°C
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
5–20
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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