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BCW72 PDF даташит

Спецификация BCW72 изготовлена ​​​​«CDIL» и имеет функцию, называемую «SILICON PLANAR EPITAXIAL TRANSISTORS».

Детали детали

Номер произв BCW72
Описание SILICON PLANAR EPITAXIAL TRANSISTORS
Производители CDIL
логотип CDIL логотип 

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BCW72 Даташит, Описание, Даташиты
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW71
BCW72
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
BCW71 = Kl
BCW72 = K2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C
IC = 2 mA; VCE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 5 V
Noise figure at RS = 2 k
IC = 200 µA; VCE = 5 V;
f = 1 kHz; B = 200 Hz
hFE
VCB0
VCE0
ICM
Ptot
Tj
BCW71
> 110
< 220
max.
max.
max.
max.
max.
BCW72
200
450
50 V
45 V
200 mA
250 mW
150 ° C
fT typ.
300 MHz
F<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 4









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BCW72 Даташит, Описание, Даташиты
BCW71
BCW72
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
Base emitter voltage
IC = 2 mA; VCE = 5 V
Saturation voltages
IC = 10 mA; lB = 0,5 mA
IC = 50 mA; lB = 2,5 mA
D.C. current gain
IC = 10 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10 V
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 5 V
Noise figure at RS = 2 k
IC = 200 µA; VCE = 5 V
f = 1 kHz; B = 200 Hz
hFE
hFE
Cc
fT
F
VCB0 max. 50 V
VCE0
VEB0
IC
ICM
Ptot
Tstg
Tj
max. 45 V
max. 5 V
max. 100 mA
max. 200 mA
max. 250 mW
–55 to +150 °C
max. 150 ° C
Rth j–a =
500 K/W
ICB0
ICB0
<
<
100 nA
10 µA
VBE 550 to 700 mV
VCEsat
VBEsat
typ.
<
typ.
VCEsat typ.
VBEsat typ.
120 mV
250 mV
750 mV
210 mV
850 mV
BCW71
typ. 90
> 110
< 220
BCW72
150
200
450
typ. 2,5 pF
typ. 300 MHz
< 10 dB
Continental Device India Limited
Data Sheet
Page 2 of 4









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BCW72 Даташит, Описание, Даташиты
BCW71
BCW72
SOT-23 Formed SMD Package
+/– 0.05
0.62
1
+/– 0.10
2.50
+/–0.025
1.30
+/-0.05
0.62
SOT-23 Package Reel Information
Reel specifications for Packing (13"/7" reels)
ł 100.0– 0.5 / ł 54.5 – 0.5 ł 329.2– 0.5 / 178 – 0.5
14.4
MAX
7.9 10.9
9.2– 0.5
cL 3
180
or
330
+0.5
2 ł 20.2 MIN
0.2
ł 13.0
33
+/– 0.05
0.62 1.30
0.08
PARTING LINE
RO.08
+/– 0.05
0.62
0.08
R0.08
+/– 4"
0.21
+/–3"
7
+/–0.10
2.50
2.0– 0.5
DETAIL X
All dimensions in mm
330 / 180 mm Antistatic Coated Plastic Reel
NOTES:
No. of Devices
8mm Tape
Size of Reel
330 mm (13")
10,000 Pcs
8mm Tape
Size of Reel
180 mm (7")
3,000 Pcs
1. The bandolier of 330 mm reel contains at least 10,000 devices.
2. The bandolier of 180 mm reel contains at least 3,000 devices.
3. No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.
15 empty compartments for 180 mm reel.
4. Three consecutive empty places might be found provided this gap is followed by 6
consecutive devices.
5. The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330
mm). In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At
the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.
Tape Specification for SOT-23 Surface Mount Device
– 0.1
4.0
– 0.05
2.0
– 0.1
4.0
– 0.05
1.55
– 0.10
2.77
– 0.1
1.75
+0.3 – 0.05
- 0.1 3.5
8.0 5.75
MAX
– 0.1
1.22
1.6
MAX
Continental Device India Limited
Direction of Unreeling
Data Sheet
– 0.05
1.0
– 0.10
3.15
All dimensions in mm
Page 3 of 4










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