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SD101C PDF даташит

Спецификация SD101C изготовлена ​​​​«BLUECOLOUR» и имеет функцию, называемую «SILICON SCHOTTKY BARRIER DIODES».

Детали детали

Номер произв SD101C
Описание SILICON SCHOTTKY BARRIER DIODES
Производители BLUECOLOUR
логотип BLUECOLOUR логотип 

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SD101C Даташит, Описание, Даташиты
SD101A (1N6263)...SD101C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD101 Series is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
The SD101A is equivalent to the 1N6263.
This diode is also available in MiniMELF case with
type designation LL101A, B, C.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Peak Reverse Voltage
Power Dissipation
SD101A
SD101B
SD101C
VRRM
Ptot
60
50
40
400 1)
Maximum Single Cycle Surge, 10 s Square wave
IFSM
2
Junction Temperature
Tj 200
Storage Temperature Range
TS - 55 to + 200
1) Valid provided the leads direct at the case are kept at ambient temperature.
Unit
V
mW
A
OC
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 10 µA
Forward Voltage
at IF = 1 mA
at IF = 15 mA
Reverse Leakage Current
at VR = 50 V
at VR = 40 V
at VR = 30 V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA , recover to 0.1 IR
Symbol
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
V(BR)R
VF
IR
SD101A
SD101B
SD101C
Ctot
trr
Min.
60
50
40
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.41
0.4
0.39
1
0.95
0.9
200
2
2.1
2.2
1
Unit
V
V
nA
pF
ns
Page 1 of 2
7/25/2012









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SD101C Даташит, Описание, Даташиты
SD101A (1N6263)...SD101C
Typical variation of fwd. current
vs. fwd. voltage for primary conduction
through the Schottky barrier
mA
10
5
SD101
A
B
C
2
1
IF
5
2
0.1
5
2
0.01
0
0.5 1V
VF
Typical forward conduction curve
of combination Schottky barrier
and PN junction guard ring
mA
100
SD101
A
B
C
80
I F 60
40
20
0
0
0.5 1V
VF
Typical variation of reverse current
at various temperatures
A
100
5
2
10
5
IR 2
1
5
SD101
150oC
125oC
100oC
75 oC
50o C
2
0.1 25 oC
5
2
0.01
0 10 20 30 40 50V
VR
Typical capacitance curve as a
function of reverse voltage
pF SD101
2 Tj=25o C
CT
1
ABC
0
0 10 20 30 40 50V
VR
Page 2 of 2
7/25/2012










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