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PDF BCW69 Data sheet ( Hoja de datos )
| Número de pieza | BCW69 | |
| Descripción | PNP General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW69 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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BCW69
PNP General Purpose Amplifier
February 2010
Features
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 100mA.
• Sourced from process 68.
3
2
1
SOT-23
Mark: H1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5.0 V
IC Collector Current - Continuous
-100
mA
TJ, TSTG
Junction and Storage Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
© 2010 Fairchild Semiconductor Corporation
BCW69 Rev. A0
1
www.fairchildsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BCW69.PDF ] | |
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