BCW69 PDF даташит
Спецификация BCW69 изготовлена «CDIL» и имеет функцию, называемую «SILICON PLANAR EPITAXIAL TRANSISTORS». |
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Детали детали
Номер произв | BCW69 |
Описание | SILICON PLANAR EPITAXIAL TRANSISTORS |
Производители | CDIL |
логотип |
4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW69
BCW70
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW69 = H1
BCW70 = H2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C
–IC = 2 mA; –VCE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V;
f = 1 kHz; B = 200 Hz
BCW69
> 120
hFE <
–VCB0 max.
–VCE0 max.
–ICM max.
Ptot max.
Tj max.
260
BCW70
215
500
50 V
45 V
200 mA
250 mW
150 ° C
fT typ.
150 MHz
F<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 4
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BCW69
BCW70
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
–IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Ti = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20 V
IE = 0; –VCB = 20 V; Tj = 100 °C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
Saturation voltages
–IC = 10 mA; –lB = 0,5 mA
–IC = 50 mA; –lB = 2,5 mA
D.C. current gain
–IC = 10 µA; –VCE = 5 V
–IC = 2 mA; –VCE = 5 V
Collector capacitance at f: 1 MHz
lE = Ie = 0; –VCB = 10 V
Transition frequency at f = 35 MHz
–IC: 10 mA; –VCE = 5 V
Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
hFE
hFE
Cc
fT
F
–VCB0 max.
–VCES max.
50 V
50 V
–VCE0
–VEB0
–IC
–ICM
Ptot
Tstg
Tj
max. 45 V
max. 5 V
max. 100 mA
max. 200 mA
max. 250 mW
–55 to +150 °C
max. 150 °C
Rth j–a =
500 K/W
–ICB0
–ICB0
<
<
100 nA
10 µA
–VBE 600 to 750 mV
–VCEsat
–VBEsat
typ.
<
typ.
80 mV
300 mV
720 mV
–VCEsat typ.
–VBEsat typ.
150 mV
810 mV
BCW69
typ. 90
BCW70
150
> 120
< 260
215
500
typ. 4,5 pF
typ. 150 MHz
< 10 dB
Continental Device India Limited
Data Sheet
Page 2 of 4
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BCW69
BCW70
SOT-23 Formed SMD Package
+/– 0.05
0.62
1
+/– 0.10
2.50
+/–0.025
1.30
+/-0.05
0.62
SOT-23 Package Reel Information
Reel specifications for Packing (13"/7" reels)
ł 100.0– 0.5 / ł 54.5 – 0.5 ł 329.2– 0.5 / 178 – 0.5
14.4
MAX
7.9 10.9
9.2– 0.5
cL 3
180
or
330
+0.5
2 ł 20.2 MIN
0.2
ł 13.0
33
+/– 0.05
0.62 1.30
7º
0.08
PARTING LINE
RO.08
+/– 0.05
0.62
0.08
R0.08
+/– 4"
6º
0.21
5º +/–3"
7
+/–0.10
2.50
2.0– 0.5
DETAIL X
All dimensions in mm
330 / 180 mm Antistatic Coated Plastic Reel
NOTES:
No. of Devices
8mm Tape
Size of Reel
330 mm (13")
10,000 Pcs
8mm Tape
Size of Reel
180 mm (7")
3,000 Pcs
1. The bandolier of 330 mm reel contains at least 10,000 devices.
2. The bandolier of 180 mm reel contains at least 3,000 devices.
3. No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.
15 empty compartments for 180 mm reel.
4. Three consecutive empty places might be found provided this gap is followed by 6
consecutive devices.
5. The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330
mm). In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At
the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.
Tape Specification for SOT-23 Surface Mount Device
– 0.1
4.0
– 0.05
2.0
– 0.1
4.0
– 0.05
1.55
– 0.10
2.77
– 0.1
1.75
+0.3 – 0.05
- 0.1 3.5
8.0 5.75
MAX
– 0.1
1.22
1.6
MAX
Continental Device India Limited
Direction of Unreeling
Data Sheet
– 0.05
1.0
– 0.10
3.15
All dimensions in mm
Page 3 of 4
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