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Datasheet BCW69 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BCW69GENERAL PURPOSE TRANSISTOR

BCW69,70 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO v EBO THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ty\ = 25°C Derat
Motorola Semiconductors
Motorola Semiconductors
transistor
2BCW69SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RA
CDIL
CDIL
transistor
3BCW69Small Signal Transistor

BCW69 and BCW70 New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View 3 .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1 = Base 2 = Emitter 3 = Collector Mounting Pad L
Vishay
Vishay
transistor
4BCW69PNP Transistors

SMD Type PNP Transistors BCW69~BCW70 (KCW69~KCW70) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BCW71 and BCW72. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4
Kexin
Kexin
transistor
5BCW69PNP General Purpose Amplifier

PNP General Purpose Amplifier FEATURES z Low current (max. 100 mA) z Low voltage (max. 45 V). Pb Lead-free Production specification BCW69/BCW70 APPLICATIONS z General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BCW69 BCW70 H1 H2 SOT-23 Package Code SOT-23 SOT
Galaxy Microelectronics
Galaxy Microelectronics
amplifier


BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BCW29EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current
KEC
KEC
transistor
2BCW29PNP General Purpose Transistors

SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle
Kexin
Kexin
transistor
3BCW29Silicon Planar Epitaxial Transistor

Philips
Philips
transistor
4BCW29GENERAL PURPOSE TRANSISTOR

BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device
Motorola Semiconductors
Motorola Semiconductors
transistor
5BCW29SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2
CDIL
CDIL
transistor
6BCW29PNP general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v
NXP Semiconductors
NXP Semiconductors
transistor
7BCW29Surface mount Si-Epitaxial PlanarTransistors

BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus
Diotec Semiconductor
Diotec Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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