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PDF BCW72 Data sheet ( Hoja de datos )
| Número de pieza | BCW72 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T"a = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
45
50
5.0
100
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/X
°C
°C/W
BCW71,72
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 2.0 mAdc, Veb = 0)
Collector-Emitter Breakdown Voltage
c(l = 2.0 mAdc, Veb = °>
Collector-Base Breakdown Voltage
c(l = 10 nAdc, Ie = 0>
Emitter-Base Breakdown Voltage
E(l = 10 /uAdc, lc = 0)
Collector Cutoff Current
(Vcb = 20 Vdc, Ie = 0)
|VC b = 20 Vdc, Ie = 0. Ta = 100°O
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, Vce = 5.0 Vdc)
BCW71
BCW72
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, Ib = 0.5 mAdc)
(IC = 50 mAdc, Ib = 2.5 mAdc)
Base-Emitter Saturation Voltage
c(l = 50 mAdc, Ib = 2.5 mAdc)
Base-Emitter On Voltage
(IC = 2.0 mAdc, Vce = 50 vdc >
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
c(l
=
10 mAdc, Vce
=
5 -0
vdc
-
f
=
35 MHz)
Output Capacitance
E(l = 0, Vce = 10 Vdc, f
1.0 MHz)
Input Capacitance
d c = o, Veb = o.5 vdc, f = i.o MHz)
Noise Figure
(IC = 0.2 mAdc, Vce = 50 Vdc, Rs
BWf = 1.0 kHz,
= 200 Hz)
2.0 kn,
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VcE(sat)
VBE(sat)
VBE(on)
C bo
Cibo
Min
45
45
50
5.0
110
200
Typ
0.21
Unit
Vdc
Vdc
Vdc
Vdc
100 nAdc
10 /LiAdc
220
450
Vdc
Vdc
Vdc
MHz
pF
pF
dB
3-19
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCW72.PDF ] | |
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