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Datasheet BCY79 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCY79 | TRANSISTOR MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Tc = 100°C Derate above 25 °C
Operating and St |  Motorola Semiconductors | transistor |
| 2 | BCY79 | PNP SILICON PLANAR TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
BCY77, BCY78 BCY79
TO-18 Metal Can Package
Low Noise Audio Amplifier input stages and Driver Applications
Complementary BCY57/58/59
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Colle |  CDIL | transistor |
| 3 | BCY79 | SILICON PNP TRANSISTORS BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifie |  Central Semiconductor | transistor |
| 4 | BCY79 | PNP switching transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY78; BCY79 PNP switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES • Low current (max. |  NXP Semiconductors | transistor |
| 5 | BCY79 | PNP SILICON PLANAR TRANSISTORS |  Siemens Semiconductor Group | transistor |
BCY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCY30 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 2 | BCY30A | Bipolar PNP Device in a Hermetically sealed TO5 Metal Package
BCY30A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5.  Seme LAB data | | |
| 3 | BCY31 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 4 | BCY31A | Bipolar PNP Device
BCY31A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5. Seme LAB data | | |
| 5 | BCY32 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 6 | BCY33 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 7 | BCY33A | Bipolar PNP Device
BCY33A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 32V
5. Seme LAB data | |
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