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2N6169 PDF даташит

Спецификация 2N6169 изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «SILICON CONTROLLED RECTIFIERS».

Детали детали

Номер произв 2N6169
Описание SILICON CONTROLLED RECTIFIERS
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

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2N6169 Даташит, Описание, Даташиты
DIGITRON SEMICONDUCTORS
2N6167-2N6170
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak forward and reverse blocking voltage (1)
(TJ = -40 to 100°C)
2N6167
2N6168
2N6169
2N6170
VDRM
VRRM
100
Volts
200
400
600
Peak non-repetitive reverse blocking voltage
(t 5ms)
2N6167
2N6168
2N6169
2N6170
VRSM
150
250
450
650
Volts
Average forward current
(TC = -40 to +65°C)
(85°C)
IT(AV)
13 Amps
6.5
Peak surge current
(1 cycle, 60Hz, TC = 65°C)
(1.5ms pulse @ TJ = 100°C)
Preceded and followed by no current or voltage
ITSM
240 Amps
560
Circuit fusing (TJ = -40 to +100°C, t = 8.3ms)
I2t
235
A2s
Peak gate power
PGM 5 Watts
Average gate power
PG(AV)
0.5 Watts
Forward peak gate current
IGM 2 Amps
Operating junction temperature range
TJ -40 to 100 °C
Storage temperature range
Tstg -40 to 150
°C
Stud torque
30 In. lb.
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested
with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Max
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TC = 100°C)
2N6167
2N6168
2N6169
2N6170
(Rated VDRM or VRRM, gate open, TC = 25°C)
All devices
IDRM,
IRRM
-
-
-
-
-
Peak forward on-state voltage
(ITM = 41A peak)
VTM -
Typ
1
1
1
1
-
1.5
Max
Unit
2.0 mA
2.5 mA
3.0 mA
4.0 mA
10 µA
Volts
1.7
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130128









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2N6169 Даташит, Описание, Даташиты
DIGITRON SEMICONDUCTORS
2N6167-2N6170
SILICON CONTROLLED RECTIFIERS
Characteristic
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 24)
TC = -40°C
TC = 25°C
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 24)
TC = -40°C
TC = 25°C
Holding current
(VD = 12Vdc, gate open, IT = 200mA)
TC = -40°C
TC = 25°C
Turn-on time
(ITM = 41A, VD = rated VDRM, IGT = 200mA, rise time 0.05µs, pulse width = 10µs)
Turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TJ = 100°C)
Forward voltage application rate
(TJ = 100°C, VD = Rated VDRM)
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Alpha-numeric
Pin out
See below
Symbol Min
IGT -
-
VGT -
-
IH
ton
toff
dv/dt
-
-
-
-
-
-
Typ
-
2.1
0.8
0.63
-
3.5
-
25
40
50
Max
75
40
2.5
1.6
90
50
1
-
-
-
Unit
mA
Volts
mA
µs
µs
V/µs
TO-48
Inches
Millimeters
Min Max Min Max
A 0.604 0.614 15.340 15.600
B 0.551 0.559 14.000 14.200
C 1.050 1.190 2.670 30.230
F 0.135 0.160 3.430 4.060
H - 0.265 - 6.730
J 0.420 0.455 10.670 11.560
K 0.620 0.670 15.750 17.020
L 0.300 0.350 7.620 8.890
Q 0.055 0.085 1.400 2.160
T 0.501 0.505 12.730 12.830
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130128










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