2N6403 PDF даташит
Спецификация 2N6403 изготовлена «Littelfuse» и имеет функцию, называемую «Silicon Controlled Rectifiers». |
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Детали детали
Номер произв | 2N6403 |
Описание | Silicon Controlled Rectifiers |
Производители | Littelfuse |
логотип |
7 Pages
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2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 V
• These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Sine Wave 50 to 60
Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
V
On-State Current RMS (180° Conduction
Angles; TC = 100°C)
Average On-State Current (180° Conduc-
tion Angles; TC = 100°C)
Peak Non-repetitive Surge Current (1/2
Cycle, Sine Wave 60 Hz, TJ = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
A
A
A
A2s
Forward Peak Gate Power (Pulse Width ≤
1.0 ms, TC = 100°C)
Forward Average Gate Power (t = 8.3 ms,
TC = 100°C)
Forward Peak Gate Current (Pulse Width ≤
1.0 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
20
0.5
2.0
−40 to
+125
W
W
A
°C
Storage Temperature Range
Tstg −40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Littelfuse.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 3
2N640xG
AYWW
1
2
3
x = 0, 1, 2, 3, 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 6
1
Publication Order Number:
2N6400/D
No Preview Available ! |
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
*Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%)
* Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°C
* Holding Current
TC = 25°C
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
*TC = −40°C
Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25°C
TJ = +125°C
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)
TJ = +125°C
*Indicates JEDEC Registered Data.
Symbol
RqJC
TL
Symbol
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Max Unit
1.5 °C/W
260 °C
Min Typ Max Unit
− − 10 mA
− − 2.0 mA
− − 1.7
− 9.0 30
− − 60
− 0.7 1.5
− − 2.5
0.2 −
−
− 18 40
− − 60
− 1.0 −
− 15 −
− 35 −
V
mA
V
V
mA
ms
ms
− 50 − V/ms
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 6
2
Publication Order Number:
2N6400/D
No Preview Available ! |
2N6400 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
128
124
α
120 α = CONDUCTION ANGLE
116
112
dc
108
104
100
0
α = 30°
60° 90° 120°
180°
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
10
16
14
TJ ≈ 125°C
12
10
α = 30°
8.0
180°
90° 120°
60°
dc
6.0
4.0
2.0
0
0
α
α = CONDUCTION ANGLE
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Figure 2. Maximum On−State Power Dissipation
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 6
3
Publication Order Number:
2N6400/D
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