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2N6403 PDF даташит

Спецификация 2N6403 изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «SILICON CONTROLLED RECTIFIERS».

Детали детали

Номер произв 2N6403
Описание SILICON CONTROLLED RECTIFIERS
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

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2N6403 Даташит, Описание, Даташиты
2N6400-2N6405
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage (1)
(TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
50
VDRM
VRRM
100
200
Volts
400
600
800
On-state RMS current
(180° conduction angles), TC = 100°C)
IT(RMS)
16 Amps
Average on-state current
(180° conduction angles, TC = 100°C)
IT(AV) 10 Amps
Peak non-repetitive surge current
(1/2 cycle, sine wave 60Hz, TJ = 90°C)
Circuit fusing (t = 8.3ms)
ITSM 160 Amps
I2t 145 A2s
Forward peak gate power
(pulse width ≤ 1.0µs, TC = 100°C)
PGM 20 Watts
Forward average gate power
(t = 8.3ms, TC = 100°C)
PG(AV)
0.5 Watts
Forward peak gate current
(Pulse width ≤ 1.0µs, T C = 100°C)
IGM 2.0 Amps
Operating junction temperature range
TJ -40 to 125 °C
Storage temperature range
Tstg -40 to 150 °C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on
the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal resistance, junction to case
RӨJC 1.5 °C/W
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds
TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(VAK = rated VDRM or VRRM, gate open)
ON CHARACTERISTICS
Peak forward on-state voltage
(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
Symbol
Min
Typ
Max Unit
TJ = 25°C
TJ = 125°C
IDRM, IRRM
VTM
-
-
-
- 10 µA
- 2.0 mA
- 1.7 Volts
Rev. 20120924









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2N6403 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TC = 25°C)
ON CHARACTERISTICS
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 100ohms)
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 100ohms)
Gate non-trigger voltage
(VD = 12Vdc, RL = 100ohms)
Holding current
(VD = 12Vdc, initiating current = 200mA, gate open)
Turn-on time
(ITM = 16A, IGT = 40mAdc, VD = rated VDRM)
Turn-off time
(ITM = 16A, IR = 16A, VD = rated VDRM)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(VD = rated VDRM, exponential waveform)
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
TC = 25°C
TC = -40°C
IGT -
-
9.0 30 mA
- 60
TC = 25°C
TC = -40°C
VGT -
-
0.7 1.5 Volts
- 2.5
TC = 125°C
VGD 0.2
-
- Volts
TC = 25°C
TC = -40°C
IH -
-
tgt -
18 40 mA
- 60
1.0 - µs
TC = 25°C
tq - 15 - µs
TJ= 125°C
- 35 -
TJ = 125°C
dv/dt
-
50
- V/µs
Rev. 20120924









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2N6403 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Rev. 20120924










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