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SBAW56WT1G PDF даташит

Спецификация SBAW56WT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual Switching Diode».

Детали детали

Номер произв SBAW56WT1G
Описание Dual Switching Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SBAW56WT1G Даташит, Описание, Даташиты
BAW56WT1G,
SBAW56WT1G
Dual Switching Diode,
Common Anode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR 70 V
Forward Current
IF 200 mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.6 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
625 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SC−70
CASE 419
STYLE 4
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAW56WT1G
SBAW56WT1G
SC−70 3,000 / Tape & Reel
(Pb−Free)
SC−70 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 8
1
Publication Order Number:
BAW56WT1/D









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SBAW56WT1G Даташит, Описание, Даташиты
BAW56WT1G, SBAW56WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Reverse Voltage Leakage Current
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
V(BR)
70
V
IR mA
− 30
− 2.5
− 50
CD pF
− 2.0
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF mV
− 715
− 855
− 1000
− 1250
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)
trr ns
− 6.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
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SBAW56WT1G Даташит, Описание, Даташиты
100
10
1.0
0.1
0.2
BAW56WT1G, SBAW56WT1G
TYPICAL CHARACTERISTICS
TA = 85°C
TA = 25°C
TA = - 40°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.75
10
1.0
0.1
0.01
0.001
1.2 0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.5
1.25
1.0
0.75
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
50
www.onsemi.com
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Номер в каталогеОписаниеПроизводители
SBAW56WT1GDual Switching DiodeON Semiconductor
ON Semiconductor

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