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BRY55-400 PDF даташит

Спецификация BRY55-400 изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «SILICON CONTROLLED RECTIFIER».

Детали детали

Номер произв BRY55-400
Описание SILICON CONTROLLED RECTIFIER
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

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BRY55-400 Даташит, Описание, Даташиты
BRY55 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1000Ω, TJ = 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
VRRM, VDRM
30
60
100 Volts
200
400
500
600
Forward current RMS (all conduction angles)
IT(RMS)
0.8 Amps
Peak forward surge current, TA = 25°C
(1/2 cycle, sine wave, 60Hz)
ITSM 8 Amps
Circuit fusing considerations, TA = 25°C
(t = 8.3ms)
I2t 0.15 A2s
Forward peak gate power, TA = 25°C
PGM 0.1 Watts
Forward peak gate current , TA = 25°C (300µs, 120 PPS)
IGFM 1 Amps
Operating junction temperature range @ rated VRRM and VDRM
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead solder temperature (<1.5mm from case, 10s max)
+230
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(VD = rated VDRM @ TC = 125°C)
Peak reverse blocking current
(VR = rated VRRM @ TC = 125°C)
Forward “on” voltage(2)
ITM = 1A peak @ TA = 25°C)
IDRM
IRRM
VTM
Gate trigger current (continuous dc)(3)
(Anode voltage = 7Vdc, RL = 100 Ω)
IGT
Min. Max.
- 100
- 100
- 1.7
- 200
Unit
µA
µA
Volts
µA
Rev. 20130117









No Preview Available !

BRY55-400 Даташит, Описание, Даташиты
BRY55 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Gate trigger voltage (continuous dc)
(Anode voltage = 7Vdc, RL = 100 Ω)
(Anode voltage = rated VDRM, RL = 100 Ω)
TC = 25°C
TC = -40°C
TC = 125°C
VGT
Holding current
(Anode voltage = 7Vdc, initiating current = 20mA)
TC = 25°C
TC = -40°C
Note 2: Forward current applied for 1ms maximum duration, duty cycle ≤ 1%.
Note 3: RGK current is not included in measurement.
IH
MECHANICAL CHARACTERISTICS
Case TO-92
Marking
Body painted, alpha-numeric
Pin out
See below
Min. Max.
- 0.8
- 1.2
0.1 -
-5
- 10
Unit
Volts
mA
Rev. 20130117









No Preview Available !

BRY55-400 Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20130117










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Номер в каталогеОписаниеПроизводители
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