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C228E PDF даташит

Спецификация C228E изготовлена ​​​​«Digitron Semiconductors» и имеет функцию, называемую «SILICON CONTROLLED RECTIFIER».

Детали детали

Номер произв C228E
Описание SILICON CONTROLLED RECTIFIER
Производители Digitron Semiconductors
логотип Digitron Semiconductors логотип 

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C228E Даташит, Описание, Даташиты
C228, C22803, C229 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off state voltage(1)
(TJ = -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
VRRM, VDRM
50
100
200
300
400
500
600
Volts
Peak non-repetitive reverse voltage
(TJ = -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
75
150
VRSM 300 Volts
400
500
600
720
Forward current RMS
IT(RMS) 35 Amps
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
ITSM 300 Amps
Circuit fusing considerations
(TC = -40 to +125°C, t = 8.3ms)
I2t 370 A2s
Peak gate power
PGM 5 Watts
Average gate power
PG(AV) 0.5 Watts
Peak forward gate current
IGM 2 Amps
Operating junction temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150
°C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate
voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
C228 and C229 SERIES
C228()3 SERIES
Symbol
RӨJC
Maximum
1.70
1.85
Unit
°C/W
Rev. 20150306









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C228E Даташит, Описание, Даташиты
C228, C22803, C229 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
IDRM, IRRM
Forward “on” voltage
(ITM = 100A peak)
VT
Gate trigger current (continuous dc)
(VD = 12V, RL = 80Ω, TC = 25°C)
(VD = 6V, RL = 80Ω, TC = -40°C)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 80Ω, TC = 25°C)
(VD = 6V, RL = 80Ω, TC = -40°C)
VGT
Gate trigger voltage
(Rated VDRM, RL = 1000Ω, TC = 125°C)
VGT
Holding current
(Anode voltage = 24V, gate open)
TC = 25°C
TC = -40°C
IH
Turn-on time (td +tr)
(ITM = 35A, IGT = 40mA)
ton
Turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TC = 100°C)
toff
Forward voltage application rate
(TC = 100°C)
dv/dt
Min.
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
Typ. Max.
- 10
-3
- 1.9
- 40
- 80
- 2.5
-3
--
- 75
- 150
1-
20 -
35 -
50 -
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
µs
V/µs
Rev. 20150306









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C228E Даташит, Описание, Даташиты
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case Digi PF1 (C229 SERIES)
Marking
Body painted, alpha-numeric
C228, C22803, C229 SERIES
SILICON CONTROLLED RECTIFIER
DIGI PF1
Inches
Millimeters
Min Max Min Max
A 0.501 0.505 12.730 12.830
F - 0.160 - 4.060
G 0.085 0.095 2.160 2.410
H 0.060 0.070 1.520 1.780
J 0.300 0.350 7.620 8.890
K - 1.050 - 26.670
L - 0.670 - 17.020
Q 0.055 0.085 1.400 2.160
Rev. 20150306










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