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PDF MMBR901 Data sheet ( Hoja de datos )
| Número de pieza | MMBR901 | |
| Descripción | RF AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
v CBO
v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
T stq
•Thermal Resistance Junction to Ambient
R 0JA
. ..
.
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
15
25
3.0
30
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = 0.1 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie_=_0)
ON CHARACTERISTICS
DC Current Gain
dc = 5.0 mAdc, Vqe
5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb
=
10
Vdc
-
'E
=
°- f
=
10 MHz)
Common-Emitter Amplifier Power Gain
(Vcc
=
6 -°
Vdc
-
lc
=
50 mAdc, f
=
1.0 GHz)
Noise Figure
C(I = 5.0 mAdc, Vqe = 6-0 Vdc, f = 1.0 GHz)
(1) Noise figure and power gain measured on the Ailtech 7380 5011 system.
MMBR901
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER TRANSISTOR
NPN SILICON
Symbol
V(BR)CEO
V(BR)CBO
v (BR)EBO
'CBO
Max
Unit
Vdc
Vdc
50
h FE 30 200
NF(1)
1.0
16(Typ)
1.9 (Typ)
pF
dB
dB
3-65
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBR901.PDF ] | |
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