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PDF MMBR5179LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBR5179LT1 | |
| Descripción | RF & MICROWAVE TRANSISTORS | |
| Fabricantes | Microsemi | |
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RF PRODUCTS DIVISION
MMBR5179LT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR5179LT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-1.4GHz
! Low noise-4.5dB@200MHz
! Low cost SOT23 package
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
12
Emitter-Base Voltage
2.5
Device Current
50
Power Dissipation
375
Junction Temperature
150
Storage Temperature
-55 to +150
Unit
V
V
V
mA
mW
C
C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 200 C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23
MMBR5179LT1
Symbol
BVCBO
BVCEO
ICBO
hFE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
IC = .01mA
IC =3mA
VEB = 15V
VCB = 1 V
Conditions
IE = 0
IB = 0
IE = 0
IC = 3 mA
Min. Typ.
20
12
25
Max.
0.02
Units
V
V
uA
Symbol
CCB
FTau
NF
Gpe
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test Conditions
VCB = 10 V f = 1.0 MHz
VCE = 6 V IC= 5 mA f = 200MHz
VCE = 6 V IC= 1.5 mA f = 200MHz
VCE = 6 V IC= 5 mA f = 200MHz
Min. Typ.
1.4
4.5
14
Max.
1.0
Units
PF
GHz
dB
dB
Copyright 2000
PDF 2000-11-06
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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