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PDF MMBR911MLT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBR911MLT1 | |
| Descripción | RF & MICROWAVE TRANSISTORS | |
| Fabricantes | Microsemi | |
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RF PRODUCTS DIVISION
MMBR911MLT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR911MLT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-6.0 GHz
! Low noise-2.9dB@1GHz
! Low cost SOT23 package
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
12
Emitter-Base Voltage
2.0
Device Current
60
Power Dissipation
333
Junction Temperature
150
Storage Temperature
-55 to +150
Unit
V
V
V
mA
mW
C
C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 225 C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23
MMBR911MLT1
Symbol
BVCBO
BVCEO
ICBO
hFE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
IC = .1mA
IC =1.0mA
VCB =15V
VCE =10V
Conditions
IE = 0
IB = 0
IE = 0
IC = 30mA
Min. Typ.
20
12
30
Max.
50
200
Units
V
V
nA
Symbol
CCB
FTau
NFmin
GNF
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test Conditions
VCB = 10 V f = 1.0 MHz
VCE = 10 V IC= 30 mA f = 1.0 GHz
VCE = 10 V IC= 10 mA f = 1.0 GHz
VCE = 10 V IC= 10 mA f = 1.0 GHz
Min.
Typ.
1.0
6.0
2.9
11
Max.
Units
PF
GHz
dB
dB
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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