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PDF MMBR911LT1G Data sheet ( Hoja de datos )

Número de pieza MMBR911LT1G
Descripción NPN SILICON HIGH-FREQUENCY TRANSISTOR
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! MMBR911LT1G Hoja de datos, Descripción, Manual

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
NPN SILICON
LOW NOISE, HIGH-FREQUENCY TRANSISTOR
DESCRIPTION:
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
small–signal plastic transistor offers superior quality and performance
at low cost.
MMBR911LT1
MMBR911LT1G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
FEATURES:
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
TSTG
TJmax
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
Storage Temperature
Maximum Junction Temperature
Value
12
20
2.0
60
333
4.44
-55 to +150
150
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005

1 page




MMBR911LT1G pdf
MMBR911LT1
MMBR911LT1G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005

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