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PDF MCR264-12 Data sheet ( Hoja de datos )

Número de pieza MCR264-12
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo



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No Preview Available ! MCR264-12 Hoja de datos, Descripción, Manual

MC264-4-MC264-12
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES:
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MCR264-4
200
Peak Repetitive Forward and Reverse Blocking Voltage (1)
(TJ = 25 to 125°C, Gate Open)
MCR264-6
MCR264-8
MCR264-10
VDRM
VRRM
400
600 Volts
800
MCR264-12
1000
Forward Current (TC = 80°C)
(All Conduction Angles)
Peak Non-Repetitive Surge Current – 8.3ms
(1/2 Cycle, Sine Wave)
1.5ms
IT(RMS)
IT(AV)
ITSM
40
25
Amps
400
450
Amps
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300µs, 120PPS)
PGM
PG(AV)
IGM
20 Watts
0.5 Watt
2 Amps
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Thermal Resistance, Junction to Case
RθJC 1 °C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the device is to be used at high sustained currents.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Forward “On” Voltage (2)
(ITM = 80A)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = -40°C)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
VTM
IGT
VGT
VGD
IH
- - 10 µA
- - 2 mA
- 1.4 2 Volts
-
-
15
30
50
90
mA
- 1 1.5 Volts
0.2 -
- Volts
- 30 60 mA
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
Note 2: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
tgt
dv/dt
- 1.5 - µs
- 50 - V/µs
Rev. 20150811

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