|
|
PDF 2N3014 Data sheet ( Hoja de datos )
| Número de pieza | 2N3014 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N3014 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage(l)
2N3013
2N3014
vCEO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
(10 /as pulse) Peak
VCES
vCBO
v EBO
"C
Total Device Dissipation (5 TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
@ Tq = 100°C
Derate above 25°C
PD
Pd
Operating and Storage Junction
Temperature Range
Tj. Tstg
mA mA(1) Applicable from 0.01
to 10
(Pulsed)
Value
15
20
40
40
5.0
200
500
0.36
2.06
1.20
0.68
6.85
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
Watt
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 100 /uAdc, V BE = 0)
Collector-Emitter Sustaining Voltage(2)
C(l = 10 mAdc, Bl = 0)
2N3013
2N3014
Collector-Base Breakdown Voltage
c(l = 100 /xAdc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 100 /iAdc, lc = 0)
Collector Cutoff Current
(Vrj E = 20 Vdc, V BE = 0)
(Vc E = 20 Vdc, V BE = 0, TA =
+ 125°C)
Base Current
(VCE = 20 Vdc, V BE = 0)
ON CHARACTERISTICS^)
DC Current Gain
(lC = 30 mAdc, VCE = 0.4 Vdc)
C(l = 100 mAdc, V CE = 0.5 Vdc)
(lC = 10 mAdc, Vc E = 0.4 Vdc)
(lC = 300 mAdc, Vc E = 1.0 Vdc)
(lC = 100 mAdc, V CE = 1.0 Vdc)
C(l = 30 mAdc, VCE = 0.4 Vdc, TA =
-55°C)
Collector-Emitter Saturation Voltage
(lC = 30 mAdc, Bl = 3.0 mAdc)
(lC = 100 mAdc, Bl = 10 mAdc)
(lC = 100 mAdc, Bl = 10 mAdc)
(lC = 300 mAdc, Bl = 30 mAdc)
(lC = 10 mAdc, Bl = 1.0 mAdc)
(lC = 30 mAdc, Bl = 3.0 mAdc, TA =
+125°C)
Base-Emitter Saturation Voltage
(lC = 30 mAdc, Bl = 3.0 mAdc)
(lC = 100 mAdc, Bl = 10 mAdc)
C(l = 300 mAdc, Bl = 30 mAdc)
(lC = 10 mAdc, Bl = 1.0 mAdc)
2N3013
2N3014
2N3013
2N3014
2N3013
2N3014
2N3013
2N3014
2N3013
2N30M
2N3013
2N3014
2N3013 JAN, JTX AVAILABLE
CASE 27, STYLE 1
TO-52 (TO-206AC)
SWITCHING TRANSISTOR
NPN SILICON
Refer to 2N3510 for graphs.
Symbol
V (BR)CES
vCEO(sus)
v (BR)CBO
v (BR)EBO
!CES
IB
40
15
20
40
5.0
-
—
— Vdc
Vdc
-
— Vdc
Vdc
/^Adc
0.3
40
0.3 /xAdc
hFE
v CE(sat)
30
25
25
15
25
12
-
v BE(sat)
0.75
0.70
120
0.18
0.28
0.35
0.50
0.18
0.25
0.95
1.20
1.70
0.80
Vdc
Vdc
4-57
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3014.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N3010 | NPN MEtal CAN - Saturated Switch |  Central Semiconductor |
| 2N3010 | NPN |  Crimson Semiconductor |
| 2N3010 | NPN High Current General Purpose Medium Speed Amplifiers |  Semicoa |
| 2N3011 | Small Signal Transistors | Central Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |