S2800B PDF даташит
Спецификация S2800B изготовлена «Motorola Semiconductors» и имеет функцию, называемую «Silicon Controlled Rectifiers». |
|
Детали детали
Номер произв | S2800B |
Описание | Silicon Controlled Rectifiers |
Производители | Motorola Semiconductors |
логотип |
4 Pages
No Preview Available ! |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
Order this document
by S2800/D
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100°C, Gate Open)
F
A
B
S2800 D
M
N
Symbol
VRRM
VDRM
Value
50
100
200
400
600
800
Unit
Volts
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage(1)
S2800
F
A
B
D
M
N
VRSM
VDSM
75
125
250
500
700
900
Volts
RMS Forward Current
(All Conduction Angles)
TC = 75°C
IT(RMS)
10
Amps
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
pForward Peak Gate Power (t 10 µs)
ITSM 100 Amps
I2t 40 A2s
PGM 16 Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ –40 to +100 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
No Preview Available ! |
S2800 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TC = 25°C
TC = 100°C
Instantaneous On-State Voltage,
p p(ITM = 30 A Peak, Pulse Width 1 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
Holding Current
(Gate Open, VD = 12 Vdc, IT = 150 mA)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 2 A, IGR = 80 mA)
Circuit Commutated Turn-Off Time
(VD = VDRM, ITM = 2 A, Pulse Width = 50 µs,
dv/dt = 200 V/µs, di/dt = 10 A/µs, TC = 75°C)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Rise, TC = 100°C)
IDRM, IRRM
VT
IGT
VGT
IH
tgt
tq
dv/dt
— — 10 µA
——
2 mA
— 1.7
2 Volts
— 8 15 mA
— 0.9 1.5 Volts
— 10 20 mA
— 1.6 — µs
— 25 — µs
— 100 — V/µs
FIGURE 1 – CURRENT DERATING
HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
100 LOAD: RESISTIVE OR INDUCTIVE
IT(RMS)
90
IT(AV)
80
70
0 2 4 6 8 10
IT(AV), IT(RMS), ON-STATE CURRENT (AMPS)
FIGURE 2 – POWER DISSIPATION
12
MAXIMUM
10
MAXIMUM
8
6
4 HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
2
RMS CURRENT
0 AV CURRENT
0 2 4 6 8 10
IT(AV), IT(RMS), MAXIMUM ON-STATE CURRENT (AMP)
2 Motorola Thyristor Device Data
No Preview Available ! |
PACKAGE DIMENSIONS
S2800 Series
BF
Q
H
Z
4
123
A
K
L
V
G
N
D
T
U
–T–
SEATING
PLANE
C
S
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.055
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.36 0.55
12.70 14.27
1.15 1.39
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
CASE 221A-04
(TO–220AB)
Motorola Thyristor Device Data
3
Скачать PDF:
[ S2800B.PDF Даташит ]
Номер в каталоге | Описание | Производители |
S2800 | Silicon Controlled Rectifiers | Motorola Semiconductors |
S2800A | SILICON CONTROLLED RECTIFIERS | Digitron Semiconductors |
S2800A | Silicon Controlled Rectifiers | GE |
S2800A | Silicon Controlled Rectifiers | Motorola Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |