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2SB624 PDF даташит

Спецификация 2SB624 изготовлена ​​​​«WEITRON» и имеет функцию, называемую «PNP Epitaxial Planar Transistors».

Детали детали

Номер произв 2SB624
Описание PNP Epitaxial Planar Transistors
Производители WEITRON
логотип WEITRON логотип 

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2SB624 Даташит, Описание, Даташиты
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
2SB624
3
2
1
SC-59
Limits
-30
-25
-5
-700
200
150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
IE=-100µA, IC=0
Collector Cutoff Current
VCB=-30V, IE=0
Emitter Cutoff Current
VEB=-5V, IE=0
Symbol
Min Typ Max Unit
BVCBO
-30
-
-V
BVCEO
-25
-
-V
BVEBO -5 -
-V
ICBO - - -0.1 µA
IEBO - - -0.1 µA
WEITRON
http://www.weitron.com.tw









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2SB624 Даташит, Описание, Даташиты
2SB624
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic
Symbol Min
Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
VCE=-1V, IC =-100mA
VCE=-1V, IC =-700mA
Collector-Emitter Saturation Voltage
IC=-700mA, IB=-70mA
Base-Emitter Voltage
VCE=-6V, IC=-10mA
1. Pulse Test: Pulse Width ≤ 350µs, Duty Cycle ≤ 2%
hFE1
hFE2
VCE(sat)
110
50
-
VBE(on) -0.6
-
-
-
-
400 -
--
-0.6 V
-0.7 V
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-6V, IC =-10mA
Output Capacitance
VCB=-6V, IE=0, f=1MHz
fT - 160 - MHz
Cob - 17 - pF
CLASSIFICATION OF hFE1
Marking
BV1
Rank
hFE1
1
110-180
BV2
2
135-220
BV3
3
170-270
BV4
4
200-320
BV5
5
250-400
WEITRON
http://www.weitron.com.tw
2/4
16-Aug-05









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2SB624 Даташит, Описание, Даташиты
2SB624
ELECTRICAL CHARACTERISTIC CURVES
250
Free air
200
150
100
50
0
0 25 50 75 100 125
TA-Ambient Temperature (˚C)
150
Fig.1 TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
-1000
-100
VCE = -6.0V
Pulsed
-10
1
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1
VBE - Base to Emitter Voltage (V)
Fig.3 COLLECTOR CURRENT VS.
BASE TO EMITTER VOLTAGE
10
IC = 10·IB
Pulsed
-1
-0.1
-0.01
-0.001
-0.1
-1
-10 -100 -1000
IC - Collector Current (mA)
Fig.5 BASE AND COLLECTOR SATURATION
VOLTAGE VS. COLLECTOR CURRENT
-100
-80
-60
-40
-20
-500
-400
-350
-450
-300
-250
-200
-150
-100
IB= -50µA
PT=200mW
0
0 -2 -4 -6 -8 -10
VCE-Collector to Emitter Voltage(V)
Fig.2 COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
1000
100
VCE = -1.0V
Pulsed
10
-0.1
-0.1
-1
-10 -100 -1000
IC - Collector Current (mA)
Fig.4 DC CURRENT GAIN VS.
COLLECTOR CURRENT
-1.0
Pulsed
-0.8
-0.6
-0.4
-0.2
0
0.1 -1 -10 -100
IB - Base Current (mA)
Fig.6 COLLECTOR TO EMITTER VOLTAGE
VS. BASE CURRENT
WEITRON
http://www.weitron.com.tw
3/4
16-Aug-05










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