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PDF 2SA1036K Data sheet ( Hoja de datos )
| Número de pieza | 2SA1036K | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SA1036K
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
3
S Top View
21
B
SC-59
Dim Min Max
A 2.70 3.10
B 1.30 1.70
C 1.00 1.30
n RoHS Compliant Product
n Large IC. ICMax.= -500 mA
n Low VCE(sat). Ideal for low-voltage operation.
D
G
C
H
MARKING : HP, HQ, HR
*
COLLECTOR
BASE
EMITTER
MAXIMUM RATINGS* TA=25 CO unless otherwise noted
K
J
D 0.35 0.50
G 1.70 2.30
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 1.25 1.65
S 2.25 3.00
All Dimension in mm
Symbol
Parameter
Value
Units
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
-40 V
-32 V
VEBO
IC
PC
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
-5 V
-500 mA
200 mW
TJ, Tstg
Junction and Storage Temperature
-55~150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO Ic=-100µA,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-100µA,IC=0
ICBO
VCB=-20V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-3V,IC=-10mA
VCE(sat) IC=-100mA,IB=-10mA
fT VCE=-5V,IC=-20mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
-40 V
-32 V
-5 V
-1 µA
-1 µA
82 390
-0.4 V
200 MHz
7 pF
CLASSIFICATION OF hFE
Rank
PQR
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
82 - 180
120 - 270
180 - 390
Any changing of specification will not be informed individual
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| PDF Descargar | [ Datasheet 2SA1036K.PDF ] | |
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