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PDF NE85633 Data sheet ( Hoja de datos )
| Número de pieza | NE85633 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE85633 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85633 / 2SC3356
Data Sheet
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Jun 28, 2011
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
<R> ORDERING INFORMATION
Part Number
NE85633
2SC3356
NE85633-T1B
2SC3356-T1B
Order Number
Package
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356-T1BA-
3-pin Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
20
12
3.0
100
200
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 1 of 7
1 page  
NE85633 / 2SC3356
A Business Partner of Renesas Electronics Corporation.
SMITH CHART
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V, 200 MHz Step
0.007.413300.008.42
0.00.941
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.03.416
60
0.303.17 500.302.18
ENT 0.4
2.0 GHz
0.6
0.8
1.0
3.0
4.0
6.0
0.1
0.2
0.3
0.4
S11e
10
20
50
REACTANCE COMPONENT
( )––RZ–O– 0.2 2.0 GHz IC = 20 mA
0.4
S0.6 22e
0.8 IC = 5 mA
IC = 20 mA
0.2 GHz
0.2 GHz
IC = 5 mA
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
120˚
0.2 GHz
150˚
S21e
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚ 2.0 GHz
60˚ 120˚
60˚
30˚ 150˚
S12e
30˚
180˚
2.0 GHz 5 10 15 20
0˚ 180˚
0.2 GHz
0.05 0.1 0.15 0.2 0.25 0˚
–150˚
–120˚
–90˚
–30˚ –150˚
–60˚
–120˚
–90˚
–30˚
–60˚
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE85633.PDF ] | |
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