2SD1781KFRA PDF даташит
Спецификация 2SD1781KFRA изготовлена «ROHM Semiconductor» и имеет функцию, называемую «Medium Power Transistor». |
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Детали детали
Номер произв | 2SD1781KFRA |
Описание | Medium Power Transistor |
Производители | ROHM Semiconductor |
логотип |
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2SD1781K FRA
Medium Power Transistor (32V, 800mA)
Parameter
VCEO
IC
Value
32V
800mA
lFeatures
1)Very low VCE(sat).
VCE(sat)=0.1V(Typ.)
(IC/IB=500mA/50mA)
2)Higt current capacity in compact package.
3)Complements the 2SB1197K FRA.
lOutline
SOT-346
SC-59
SMT3
lInner circuit
Datasheet
AEC-Q101 Qualified
lApplication
POWER AMPLIFIER
lPackaging specifications
Part No.
Package
2SD1781K FRA
SOT-346
(SMT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2928 T146 180
8
3000
AF
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© 2016 ROHM Co., Ltd. All rights reserved.
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20160909 - Rev.001
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2SD1781K FRA
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
40
32
5
800
1.5
200
150
-55 to +150
Unit
V
V
V
mA
A
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 50μA
Collector cut-off current
ICBO VCB = 20V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA
DC current gain
hFE VCE = 3V, IC = 100mA
Transition frequency
fT
VCE = 5V, IE = -50mA,
f = 100MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
Values
Min. Typ. Max.
40 -
-
32 -
-
5- -
- - 500
- - 500
- 100 400
120 - 390
- 150 -
- 15 -
Unit
V
V
V
nA
nA
mV
-
MHz
pF
hFE values are calssified as follows :
rank Q
R
-
-
-
hFE
120-270
180-390
-
-
-
*1 Pw=100ms Single pulse
*2 Each terminal mounted on a reference land.
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/6
20160909 - Rev.001
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2SD1781K FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Ground Emitter Propagation
Characteristics
Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current (I)
Fig.4 DC Current Gain vs. Collector
Current (II)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20160909 - Rev.001
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Номер в каталоге | Описание | Производители |
2SD1781KFRA | Medium Power Transistor | ROHM Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |