BC858W PDF даташит
Спецификация BC858W изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistors». |
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Детали детали
Номер произв | BC858W |
Описание | PNP general purpose transistors |
Производители | NXP Semiconductors |
логотип |
10 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
No Preview Available ! |
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W;
BC858W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMBER
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
MARKING CODE(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3M*
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
1
Top view
3
1
2
MAM048
3
2
Fig.1 Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04
2
No Preview Available ! |
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC856W
BC857W
BC858W
collector-emitter voltage
BC856W
BC857W
BC858W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
Note
1. Refer to SOT323 standard mounting conditions.
CONDITIONS
in free air; note 1
MIN.
MAX.
UNIT
− −80 V
− −50 V
− −30 V
− −65 V
− −45 V
− −30 V
− −5 V
−
−100
mA
−
−200
mA
−
−200
mA
− 200 mW
−65
+150
°C
− 150 °C
−65
+150
°C
VALUE
625
UNIT
K/W
2002 Feb 04
3
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