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CLA5E1200UC PDF даташит

Спецификация CLA5E1200UC изготовлена ​​​​«IXYS» и имеет функцию, называемую «High Efficiency Thyristor».

Детали детали

Номер произв CLA5E1200UC
Описание High Efficiency Thyristor
Производители IXYS
логотип IXYS логотип 

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CLA5E1200UC Даташит, Описание, Даташиты
High Efficiency Thyristor
Single Thyristor
Part number
CLA5E1200UC
Marking on Product: C5TLUE
21
3
CLA5E1200UC
VRRM = 1200 V
I TAV
=
5A
VT = 1.31 V
Backside: anode
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-252 (DPak)
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c









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CLA5E1200UC Даташит, Описание, Даташиты
CLA5E1200UC
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 5 A
I T = 10 A
IT = 5 A
I T = 10 A
average forward current
TC = 135°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 10 A
tP = 200 µs; diG /dt = 0.1 A/µs;
IG = 0.1 A; V = VDRM
non-repet., IT = 5 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
latching current
holding current
gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VR = 100 V; IT = 5 A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1300 V
1200 V
10 µA
1 mA
1.33 V
1.62 V
1.31 V
1.72 V
5A
7.8 A
0.89 V
85 m
1.5 K/W
0.50 K/W
85 W
70 A
76 A
60 A
64 A
25 A²s
24 A²s
18 A²s
17 A²s
2 pF
5W
2.5 W
0.25 W
150 A/µs
500 A/µs
500 V/µs
1.8 V
1.9 V
30 mA
50 mA
0.2 V
1 mA
45 mA
30 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c









No Preview Available !

CLA5E1200UC Даташит, Описание, Даташиты
Package TO-252 (DPak)
Symbol
I RMS
TVJ
Top
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
FC mounting force with clip
Conditions
per terminal
CLA5E1200UC
Ratings
min. typ. max. Unit
20 A
-40 150 °C
-40 125 °C
-40 150 °C
0.3 g
20 60 N
Product Marking
Logo
Part number
IXYS
abcdefg
Assembly Line
Date Code
Z YY
WW
Part description
C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
5 = Current Rating [A]
E = Single Thyristor
1200 = Reverse Voltage [V]
UC = TO-252AA (DPak)
Ordering
Standard
Ordering Number
CLA5E1200UC
Marking on Product
C5TLUE
Delivery Mode
Tape & Reel
Quantity Code No.
2500 509799
Similar Part
CLA5E1200PZ
Package
TO-263AB (D2Pak) (2HV)
Voltage class
1200
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max
R0 max
threshold voltage
slope resistance *
0.89
82
* on die level
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c










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Номер в каталогеОписаниеПроизводители
CLA5E1200UCHigh Efficiency ThyristorIXYS
IXYS

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