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PDF CLA100PD1200NA Data sheet ( Hoja de datos )

Número de pieza CLA100PD1200NA
Descripción High Efficiency Thyristor
Fabricantes IXYS 
Logotipo IXYS Logotipo



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High Efficiency Thyristor
Phase leg
Part number
CLA100PD1200NA
4 3 12
CLA100PD1200NA
VRRM
I TAV
VT
= 2x 1200 V
= 100 A
= 1,21 V
Backside: Isolated
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b

1 page




CLA100PD1200NA pdf
CLA100PD1200NA
Thyristor
200
150
IT
100
[A]
50 125°C
150°C
TVJ = 25°C
0
0,5 1,0 1,5
VT [V]
Fig. 1 Forward characteristics
1300
1200
50 Hz, 80% VRRM
1100
ITSM1000
900
[A]
800
700
TVJ = 45°C
TVJ = 125°C
600
500
0,01
0,1
t [s]
1
Fig. 2 Surge overload current
12000
VR = 0 V
8000
I2t
[A2s]
4000
TVJ = 45°C
TVJ = 125°C
0
1 2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 ms)
10
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
1000
100
tgd
6
45
[µs]
10
typ. Limit
TVJ = 125°C
160
140
120
IT(AV)M100
80
[A]
60
40
dc =
1
0.5
0.4
0.33
0.17
0.08
0,1
1
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
10 100 1000 10000
IG [mA]
1
10
100
IG [mA]
1000
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
Fig. 6 Max. forward current
at case temperature
160
120
P(AV)
80
[W]
dc =
1
0.5
0.4
0.33
0.17
0.08
40
RthHA
0.2
0.4
0.6
0.8
1.0
2.0
0,4
0,3
ZthJC
0,2
[K/W]
0,1
0
0 20 40 60 80 100 120 0
IT(AV) [A]
50 100
Tamb [°C]
150
0,0
1
Rthi [K/W]
0.022
0.014
0.083
0.096
0.135
ti [s]
0.011
0.001
0.04
0.40
0.16
10
100
1000
10000
t [ms]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b

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