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PDF MCD250-16io1 Data sheet ( Hoja de datos )
| Número de pieza | MCD250-16io1 | |
| Descripción | Thyristor / Diode Module | |
| Fabricantes | IXYS | |
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Thyristor \ Diode Module
Phase leg
Part number
MCD250-16io1
3 1 5 42
MCD250-16io1
VRRM
I TAV
VT
Phase out
= 2x 1600 V
= 290 A
= 1.06 V
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: Y2
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Recommended replacement: MCD310-16io1
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170317d
1 page  
Thyristor
12000
10000
50 Hz, 80% VRRM
8000
ITSM
IFSM 6000
TVJ = 45°C
[A]
4000
TVJ = 140°C
2000
106
VR = 0 V
I2t
[A2s]
TVJ = 45°C
TVJ = 140°C
MCD250-16io1
Phase out
600
500
400
ITAVM
300
[A]
200
100
DC
180° sin
120°
60°
30°
0
10-3
10-2
10-1
t [s]
100
101
Fig. 1 Surge overload current
IT(F)SM: crest value, t: duration
105
1
23
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
600
500
400
PT
300
[W] 200
100
DC
180° sin
120°
60°
30°
RthJA
[K/W]
0.3
0.4
0.5
0.6
0.8
1
1.4
1.8
0
0 100 200 300 400 0
ITAVM, IFAVM [A]
50 100
TA [°C]
Fig. 4 Power dissipation versus onstate current and•
ambient temperature (per thyristor/diode)
150
2500
RthKA
[K/W]
0.03
2000
PT
1500
0.04
0.06
0.08
0.1
[W]
1000
500
Circuit
B6
3x MCC250
or MCD250
0.15
0.2
0.3
0
0 50 100 150 200
TC [°C]
Fig. 3 Max. forward current
at case temperature
10
IGT: TVJ = -40°C
IGT: TVJ = 0°C
IGT: TVJ = 25°C
1
VG
3
2
1
[V]
0.1
1: PGAV = 20W
2: PGAV = 60W
3: PGAV = 120W
IGD:
TVJ = 25°C
TVJ = 125°C
0.01
0.001 0.01
0.1 1
IG [A]
10 150
Fig. 5 Gate trigger characteristics
100
TVJ = 25°C
100
tgd
[µs]
100
typ. Limit
0
0 200 400 600
0
50 100
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
150
100
0.01
0.1 1
IG [A]
10
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170317d
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD250-16io1.PDF ] | |
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