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PDF MCD161-22io1 Data sheet ( Hoja de datos )
| Número de pieza | MCD161-22io1 | |
| Descripción | High Voltage Thyristor / Diode Module | |
| Fabricantes | IXYS | |
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High Voltage Thyristor \ Diode Module
Phase leg
Part number
MCD161-22io1
MCD161-22io1
VRRM
I TAV
VT
= 2x 2200 V
= 165 A
= 1.08 V
3 1 5 42
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: Y4
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
1 page  
MCD161-22io1
Thyristor
6000
5000
4000
ITSM
3000
[A]
2000
1000
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 125°C
106
I2dt
105
[A2s]
TVJ = 45°C
TVJ = 125°C
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current ITSM,
IFSM: Crest value, t: duration
104
1
10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
320
280
240
200
ITAVM
160
[A]
120
DC
180° sin
120°
60°
30°
80
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
400
360
320
280
Ptot 240
200
[W] 160
120
80
DC
180° sin
120°
60°
30°
RthKA K/W
0.1
0.2
0.3
0.5
0.8
1.5
2.0
40
0
0 50 100 150 200 250 0
ITAVM [A]
25 50 75 100 125 150
Ta [°C]
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
100
tp = 30 µs
tp = 500 µs
PGM = 120 W
60 W
10 PGAV = 8 W
VG
[V]
1
0.1
0.01
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
IGD
0.1 1 10
IG [A]
Fig. 5 Gate trigger characteristics
1600
1200
Ptot
800
[W]
400
RthKA K/W
0.02
0.04
0.06
0.10
0.15
0.20
0.30
100
10
tgd
[μs]
1
TVJ = 25°C
limit
typ.
0
0 100 200 300 400 500 0
IdAVM [A]
25 50 75 100 125 150
T a [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
0.1
0.01
0.1 1
IG [A]
10
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD161-22io1.PDF ] | |
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