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PDF MCD310-22io1 Data sheet ( Hoja de datos )
| Número de pieza | MCD310-22io1 | |
| Descripción | High Voltage Thyristor / Diode Module | |
| Fabricantes | IXYS | |
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High Voltage Thyristor \ Diode Module
Phase leg
Part number
MCD310-22io1
MCD310-22io1
VRRM
I TAV
VT
= 2x 2200 V
= 320 A
= 1.09 V
3 1 5 42
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: Y2
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116b
1 page  
MCD310-22io1
Thyristor
10000
8000
ITSM 6000
IFSM
[A] 4000
2000
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 140°C
106
VR = 0 V
I2t
105
[A2s]
TVJ = 45°C
TVJ = 140°C
600
500
400
ITAVM
300
[A]
200
100
DC
180° sin
120°
60°
30°
0
0.001
0.01
0.1 s 1
t [s]
Fig. 1 Surge overload current
IT(F)SM: crest value, t: duration
104
0.001
0.01
t [s]
Fig. 2 I2t versus time (1-10 ms)
800
600
PT
400
[W]
200
DC
180° sin
120°
60°
30°
RthJA
[K/W]
0.2
0.3
0.4
0.5
0.6
0.8
1
1.4
0
0 50 100 150 200
TC [°C]
Fig. 3 Max. forward current
at case temperature
10
IGT: TVJ = -40°C
IGT: TVJ = 0°C
IGT: TVJ = 25°C
1
VG
3
2
1
[V]
0.1
1: PGAV = 20W
2: PGAV = 60W
3: PGAV = 120W
IGD:
TVJ = 25°C
TVJ = 125°C
0
0 100 200 300 400 500 0
ITAVM, IFAVM [A]
50
Fig. 4 Power dissipation versus onstate current and•
ambient temperature (per thyristor/diode)
3000
2500
2000
PT
1500
[W]
1000
500
Circuit
B6
3x MCC310 or
3x MCD310
100
TA [°C]
150
RthKA
[K/W]
0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3
0.01
0.001 0.01
0.1 1
IG [A]
10 150
Fig. 5 Gate trigger characteristics
100
TVJ = 25°C
100
tgd
[µs]
100
typ. Limit
0
0 200 400 600 800 0
50 100
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
150
100
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD310-22io1.PDF ] | |
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