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N1114LC140 PDF даташит

Спецификация N1114LC140 изготовлена ​​​​«IXYS» и имеет функцию, называемую «Phase Control Thyristor».

Детали детали

Номер произв N1114LC140
Описание Phase Control Thyristor
Производители IXYS
логотип IXYS логотип 

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N1114LC140 Даташит, Описание, Даташиты
Date:- 02 August 2012
Data Sheet Issue:- 2
Phase Control Thyristor
Types N1114LC120 to N1114LC180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1800
1200-1800
1200-1800
1300-1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM, Tcase=125°C.
MAXIMUM
LIMITS
1114
756
450
2214
1885
12.7
14.0
806×103
980×103
500
1000
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1114LC120 to N1114LC180 Issue 2
Page 1 of 10
August 2012









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N1114LC140 Даташит, Описание, Даташиты
Characteristics
Phase Control Thyristor Types N1114LC120 to N1114LC180
PARAMETER
VTM
Maximum peak on-state
voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr
Critical rate of rise of off-state
voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH
RthJK
Holding current
Thermal resistance, junction to
heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 1.59 ITM=1700A
- 1.0
- 0.349
- - VD=80% VDRM
- 60 Rated VDRM
- 60 Rated VRRM
- 3.0 Tj=25°C
- 300 Tj=25°C.
VD=10V, IT=2A
- 1000 Tj=25°C
- 0.032 Double side cooled
- 0.064 Single side cooled
- 20
340 -
Notes:-
1) Unless otherwise indicated Tj=125°C.
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
K/W
K/W
kN
g
Data Sheet. Types N1114LC120 to N1114LC180 Issue 2
Page 2 of 10
August 2012









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N1114LC140 Даташит, Описание, Даташиты
Phase Control Thyristor Types N1114LC120 to N1114LC180
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
18
VDRM VDSM VRRM
V
1200
1400
1600
1800
VRSM
V
1300
1500
1700
1900
VD VR
DC V
810
930
1040
1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N1114LC120 to N1114LC180 Issue 2
Page 3 of 10
August 2012










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