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N1479NC30R PDF даташит

Спецификация N1479NC30R изготовлена ​​​​«IXYS» и имеет функцию, называемую «Phase Control Thyristor».

Детали детали

Номер произв N1479NC30R
Описание Phase Control Thyristor
Производители IXYS
логотип IXYS логотип 

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N1479NC30R Даташит, Описание, Даташиты
Date:- 8th February 2013
Data Sheet Issue:- 1
Phase Control Thyristor For Rotating
Applications
Types N1479NC24R to N1479NC30R
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2400-3000
2400-3000
2400-3000
2500-3100
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=3000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1436
989
602
2830
2466
21
23
2.21×106
2.65×106
200
400
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1479NC24R to N1479NC30R Issue 1.
Page 1 of 11
February, 2013









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N1479NC30R Даташит, Описание, Даташиты
Characteristics
N1479NC24R to N1479NC30R
PARAMETER
VTM
VT0
rT
(dv/dt)cr
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
RthJK
Thermal resistance, junction to heatsink
F Mounting force
a Acceleration
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
0.6
1.2
3600
2700
140
40
390
560
-
-
-
-
510
1.9 ITM=2550A
1.0
0.342
- VD=80% VDRM, linear ramp
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=2A
300
1000
1.5
2.5
Tj=25°C
VD=80%VDRM, ITM=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
-
2900
ITM=1000A, tp=1ms, di/dt=10A/µs, Vr=50V
-
-
500
700
0.022
ITM=1000A, tp=1ms, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1ms, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.044 Single side cooled
26
620 (note 2)
-
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
m/s2
g
Notes: -
1) Unless otherwise indicated Tj=125°C.
2) Device suitable for a maximum acceleration of 620m/s2 in the Y axis and clamped with the anode
facing the centre of rotation.
Data Sheet. Types N1479NC24R to N1479NC30R Issue 1.
Page 2 of 11
February, 2013









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N1479NC30R Даташит, Описание, Даташиты
N1479NC24R to N1479NC30R
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
24
26
28
30
VDRM VDSM VRRM
V
2400
2600
2800
3000
VRSM
V
2500
2700
2900
3100
VD VR
DC V
1450
1550
1650
1750
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N1479NC24R to N1479NC30R Issue 1.
Page 3 of 11
February, 2013










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