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N2086NC060 PDF даташит

Спецификация N2086NC060 изготовлена ​​​​«IXYS» и имеет функцию, называемую «Phase Control Thyristor».

Детали детали

Номер произв N2086NC060
Описание Phase Control Thyristor
Производители IXYS
логотип IXYS логотип 

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N2086NC060 Даташит, Описание, Даташиты
Date:- 02 August 2012
Data Sheet Issue:- 3
Phase Control Thyristor
Types N2086NC060 to N2086NC100
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current. Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)
Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3.
Page 1 of 11
MAXIMUM
LIMITS
600-1000
600-1000
600-1000
700-1100
MAXIMUM
LIMITS
2086
1378
792
4207
3439
35.0
38.0
6.13×106
7.22×106
250
500
1000
5
4
30
-40 to +125
-40 to +150
UNITS
V
V
V
V
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
August 2012









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N2086NC060 Даташит, Описание, Даташиты
Characteristics
Phase Control Thyristor Types N2086NC060 to N2086NC100
PARAMETER
VTM Maximum peak on-state voltage
VT0
rT
(dv/dt)cr
IDRM
IRRM
VGT
IGT
VGD
IH
tgd
tgt
Qrr
Qra
Irm
trr
tq
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time
RthJK
Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
-
0.8
1.5
1600
1100
120
18
200
300
-
-
-
510
1.12
1.49
0.84
ITM=2550A
ITM=6250A
0.108
- VD=80%VDRM, linear ramp, Gate o/c
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
0.25
1000
1.5
3.0
Rated VDRM
Tj=25°C
VD=67%VDRM, ITM=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
-
1400 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.024
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.048 Single side cooled
26
-
Notes: -
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3.
Page 2 of 11
August 2012









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N2086NC060 Даташит, Описание, Даташиты
Phase Control Thyristor Types N2086NC060 to N2086NC100
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
06
07
08
09
10
VDRM VDSM VRRM
V
600
700
800
900
1000
VRSM
V
700
800
900
1000
1100
VD VR
DC V
420
490
560
630
700
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N2086NC060 to N2086NC100 Issue 3.
Page 3 of 11
August 2012










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N2086NC060Phase Control ThyristorIXYS
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