DataSheet26.com

N3565HA180 PDF даташит

Спецификация N3565HA180 изготовлена ​​​​«IXYS» и имеет функцию, называемую «Phase Control Thyristor».

Детали детали

Номер произв N3565HA180
Описание Phase Control Thyristor
Производители IXYS
логотип IXYS логотип 

11 Pages
scroll

No Preview Available !

N3565HA180 Даташит, Описание, Даташиты
Date:- 16th December, 2014
Data Sheet Issue:- A2
Phase Control Thyristor
Types N3565HA160 and N3565HA180
Development Type No.: NX449HA160 and NX449HA180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1600-1800
1600-1800
1600-1800
1700-1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Maximum average on-state current. Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)
Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
Data Sheet. Types N3565HA160 to N3565HA180 Issue A2.
Page 1 of 11
MAXIMUM
LIMITS
3565
2435
1185
7050
6070
45.5
50.0
1.04 x 107
1.25 x 107
75
150
300
5
5
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
V
°C
°C
December, 2014









No Preview Available !

N3565HA180 Даташит, Описание, Даташиты
Characteristics
Phase Control Thyristor Types N3565HA1600 and N3565HA1800
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
1.0
2.0
4700
2100
148
28
150
200
-
-
-
-
890
1.20 ITM=2500A
0.90
0.11
- VD=80% VDRM, linear ramp, Gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000
2.0
3.0
Tj=25°C
VD=67%VDRM, ITM=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
5525
- ITM=2000A, tp=2000µs, di/dt=10A/µs,
- Vr=100V
-
-
ITM=2000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
ITM=2000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
0.0105 Double side cooled
0.0171 Anode side cooled
0.0276 Cathode Side Cooled
40
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
g
Notes: -
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N3565HA160 to N3565HA180 Issue A2.
Page 2 of 11
December, 2014









No Preview Available !

N3565HA180 Даташит, Описание, Даташиты
Phase Control Thyristor Types N3565HA1600 and N3565HA1800
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
16
18
VDRM VDSM VRRM
V
1600
1800
VRSM
V
1700
1900
VD VR
DC V
1020
1150
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
8.0 Computer Modelling Parameters
Data Sheet. Types N3565HA160 to N3565HA180 Issue A2.
Page 3 of 11
December, 2014










Скачать PDF:

[ N3565HA180.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
N3565HA180Phase Control ThyristorIXYS
IXYS

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск